DC/DC Converter, Power Supply Circuit, And Semiconductor Device

ABSTRACT

Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/154,827, filed Jun. 7, 2011, now allowed, which claims the benefit ofa foreign priority application filed in Japan as Serial No. 2010-132529on Jun. 10, 2010, both of which are incorporated by reference.

TECHNICAL FIELD

The present invention relates to a DC-DC converter (directcurrent-direct current converter), a power supply circuit, and asemiconductor device, which include thin semiconductor films.

BACKGROUND ART

In recent years, a metal oxide having semiconductor characteristics,which is called an oxide semiconductor, has attracted attention as anovel semiconductor material having high mobility as polysilicon ormicrocrystalline silicon and having uniform element characteristics asamorphous silicon. A metal oxide is used for various applications. Forexample, indium oxide which is a well-known metal oxide is used as amaterial of a transparent electrode included in a liquid crystal displaydevice or the like. Examples of such metal oxides having semiconductorcharacteristics include tungsten oxide, tin oxide, indium oxide, andzinc oxide. Transistors each of which includes a channel formationregion formed using such a metal oxide having semiconductorcharacteristics have been known (Patent Documents 1 and 2).

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    2007-123861-   [Patent Document 2] Japanese Published Patent Application No.    2007-096055

DISCLOSURE OF INVENTION

A DC-DC converter is a constant-voltage circuit with which a constantoutput voltage can be obtained regardless of the value of an inputvoltage, and the DC-DC converter is used for a power supply circuittogether with a rectification circuit or the like. In particular, apower supply circuit including a switching type DC-DC converter isreferred to as a switching power source or a switching regulator.

The switching type DC-DC converter outputs a voltage of a predeterminedlevel in such a manner that voltage with a pulse waveform is formedusing an input voltage by a switching element and the voltage issmoothed or held in a coil, a capacitor, or the like. With a switchingtype DC-DC converter, internal power loss can be lower theoretically,whereby power conversion efficiency can be high and heat radiation dueto power loss can be suppressed in comparison with a linear type DC-DCconverter utilizing voltage drop due to resistance. Therefore, in asemiconductor device which needs a high output voltage, such as amicroprocessor, a power supply circuit including the switching typeDC-DC converter is often used.

However, although the switching type DC-DC converter has high powerconversion efficiency in comparison with the linear type one, it isnecessary to further increase power conversion efficiency in order toachieve reduction in power consumption of a semiconductor device. Inparticular, in the case of a portable electronic device using poweraccumulated in a capacitor or a battery such as a primary battery or asecondly battery, the DC-DC converter is necessarily used for convertingvoltage output from the battery, the capacitor, or the like into avoltage of an optimal level. Improvement of power conversion efficiencyof the DC-DC converter leads to lower power consumption of asemiconductor device and a long continuous use time of a portableelectronic device including the semiconductor device.

In view of the above problems, an object of the present invention is toprovide a DC-DC converter achieving improvement of power conversionefficiency and a power supply circuit including the DC-DC converter.Further, an object of the present invention is to reduce powerconsumption of a semiconductor device including a DC-DC converter.

The present inventors focus on the fact that the power conversionefficiency of the DC-DC converter depends on the on-state resistance orthe off-state current of a transistor functioning as a switching elementfor controlling output power. Further, the present inventors considerthat in the case where the output power of the DC-DC converter is low,power loss due to the off-state current of a transistor, rather thanpower loss due to the on-state resistance of the transistor, leads tolower power conversion efficiency. Moreover, the present inventors alsoconsider that in the case of the output power of the DC-DC converter ishigh, the power loss due to the on-state resistance of the transistor,rather than power loss due to the off-state current of a transistor,leads to lower power conversion efficiency.

In a DC-DC converter according to an embodiment of the presentinvention, a transistor functioning as a switching element includes aback gate electrode, which controls the threshold voltage and whichfaces a general gate electrode, in addition to the general gateelectrode. Further, the DC-DC converter includes a back gate controlcircuit for controlling a potential applied to the back gate electrodein accordance with the output power output from the DC-DC converter. Thepotential applied to the back gate electrode is controlled by the backgate control circuit, so that the threshold voltage can be adjusted tolower the on-state resistance when the output power is high (i.e., whenthe output power exceeds a predetermined value) and to lower theoff-state current when the output power is low (i.e., when the outputpower is equal or smaller than the predetermined value).

Further, in a DC-DC converter according to an embodiment of the presentinvention, a transistor functioning as a switching element is aninsulating-gate-field-effect transistor with an extremely low off-statecurrent (hereinafter, simply referred to as a transistor). A channelformation region of the transistor includes a semiconductor materialwhose band gap is wider than that of a silicon semiconductor and whoseintrinsic carrier density is lower than that of silicon. Thesemiconductor material having such characteristics is included in thechannel formation region, so that a transistor with an extremely lowoff-state current and high withstand voltage can be realized. Asexamples of such a semiconductor material, an oxide semiconductor havinga band gap which is approximately three times as large as that ofsilicon can be given. The transistor with such a structure is used as aswitching element, so that deterioration of the switching element due toapplication of high voltage can be prevented in the case of high outputpower, and an off-state current can be suppressed to be extremely low inthe case of low output power.

An oxide semiconductor highly-purified by reduction in impurities suchas moisture or hydrogen which serves as an electron donor (a purifiedOS) is an i-type semiconductor (an intrinsic semiconductor) or asubstantially i-type semiconductor. Therefore, a transistor includingthe oxide semiconductor has a characteristic of very low off-statecurrent. Specifically, the hydrogen concentration in the highly-purifiedoxide semiconductor which is measured by secondary ion mass spectrometry(SIMS) is less than or equal to 5×10¹⁹/cm³, preferably less than orequal to 5×10¹⁸/cm³, more preferably less than or equal to 5×10¹⁷/cm³,still more preferably less than or equal to 1×10¹⁶/cm³. In addition, thecarrier density of the oxide semiconductor film, which is measured byHall effect measurement, is less than 1×10¹⁴/cm³, preferably less than1×10¹²/cm³, more preferably less than 1×10¹¹/cm³. Furthermore, the bandgap of the oxide semiconductor is 2 eV or more, preferably 2.5 eV ormore, more preferably 3 eV or more. With the use of the oxidesemiconductor film which is highly purified by sufficiently reducing theconcentration of impurities such as moisture or hydrogen, an off-statecurrent of the transistor can be reduced.

The analysis of the concentration of hydrogen in the oxide semiconductorfilm is described here. The hydrogen concentrations in the oxidesemiconductor film and the conductive film are measured by SIMS. It isknown that it is difficult to obtain data in the proximity of a surfaceof a sample or in the proximity of an interface between stacked filmsformed using different materials by the SIMS because of its principle.Thus, in the case where distributions of the hydrogen concentration ofthe films in thickness directions are analyzed by SIMS, an average valuein a region where the films are provided, the value is not greatlychanged, and almost the same value can be obtained are employed as thehydrogen concentration. Further, in the case where the thickness of thefilm is small, a region where almost the same value can be obtainedcannot be found in some cases due to the influence of the hydrogenconcentration of the films adjacent to each other. In this case, themaximum value or the minimum value of the hydrogen concentration of aregion where the films are provided is employed as the hydrogenconcentration of the film. Furthermore, in the case where a maximum peakand a minimum valley do not exist in the region where the film isprovided, the value of the inflection point is employed as the hydrogenconcentration.

Various experiments can actually prove a low off-state current of thetransistor including the highly-purified oxide semiconductor film as anactive layer. For example, even with an element with a channel width of1×10⁶ μm and a channel length of 10 μm, in a range of from 1 V to 10 Vof voltage (drain voltage) between a source electrode and a drainelectrode, it is possible that an off-state current (which is draincurrent in the case where voltage between a gate electrode and thesource electrode is 0 V or lower) is less than or equal to themeasurement limit of a semiconductor parameter analyzer, that is, lessthan or equal to 1×10⁻¹³ A. In this case, an off-state current densitycorresponding to a value obtained by dividing the off-state current bythe channel width of the transistor is less than or equal to 100 zA/μm.As mentioned below, a capacitor and a transistor were connected to eachother and an off-state current density was measured by using a circuitin which electric charge flowing to or out from the capacitor wascontrolled by the transistor. In the measurement, the highly-purifiedoxide semiconductor film was used as a channel formation region in thetransistor, and the off-state current density of the transistor wasmeasured on the basis of change in the amount of electric charge of thecapacitor per unit time. As a result, in the case where the voltagebetween the source electrode and the drain electrode of the transistorwas 3V, a lower off-state current density of several tens yoctoampereper micrometer (yA/μm) was obtained. Therefore, in the semiconductordevice relating to an embodiment of the present invention, the off-statecurrent density of the transistor including the highly-purified oxidesemiconductor film as an active layer can be less than or equal to 100yA/μm, preferably less than or equal to 10 yA/μm, or more preferablyless than or equal to 1 yA/μm, depending on the voltage between thesource electrode and drain electrode. Accordingly, a transistorincluding the highly purified oxide semiconductor film as an activelayer has extremely low off-state current density compared with that ofa transistor including crystalline silicon.

As the oxide semiconductor, a four-component metal oxide such as anIn—Sn—Ga—Zn—O-based oxide semiconductor; a three-component metal oxidesuch as an In—Ga—Zn—O-based oxide semiconductor, an In—Sn—Zn—O-basedoxide semiconductor, an In—Al—Zn—O-based oxide semiconductor, aSn—Ga—Zn—O-based oxide semiconductor, an Al—Ga—Zn—O-based oxidesemiconductor, and a Sn—Al—Zn—O-based oxide semiconductor; atwo-component metal oxide such as an In—Zn—O-based oxide semiconductor,a Sn—Zn—O-based oxide semiconductor, an Al—Zn—O-based oxidesemiconductor, a Zn—Mg—O-based oxide semiconductor, a Sn—Mg—O-basedoxide semiconductor, an In—Mg—O-based oxide semiconductor, anIn—Ga—O-based oxide semiconductor; an In—O-based oxide semiconductor; aSn—O-based oxide semiconductor; or a Zn—O-based oxide semiconductor canbe used. Note that in this specification, for example, anIn—Sn—Ga—Zn—O-based oxide semiconductor means a metal oxide includingindium (In), tin (Sn), gallium (Ga), and zinc (Zn). There is noparticular limitation on the stoichiometric proportion. The above oxidesemiconductor may include silicon.

Alternatively, the oxide semiconductor can be represented by thechemical formula, InMO₃(ZnO)_(m) (m>0, m is not necessarily a naturalnumber). Here, M represents one or more metal elements selected from Zn,Ga, Al, Mn, and Co. For example, M can be Ga, Ga and Al, Ga and Mn, Gaand Co, or the like.

In an embodiment of the present invention, with the aforementionedstructure, the on-state resistance of a transistor is lowered in thecase of high output power and the off-state current of the transistor islowered in the case of low output power. Accordingly, anticipation of acountermeasure against the power loss taking into account the fact thata main factor of power loss depends on the magnitude of the output powerallows the improvement in the power conversion efficiency of a DC-DCconverter and a power supply circuit including the DC-DC converter. Inaddition, the power conversion efficiency of the DC-DC converter can beimproved, so that power consumption of a semiconductor device includingthe DC-DC converter can be reduced.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a diagram illustrating a structure of a DC-DC converter andFIG. 1B is a diagram illustrating a cross-sectional structure of atransistor.

FIGS. 2A and 2B are diagrams each illustrating an example of a structureof a DC-DC converter.

FIGS. 3A to 3D are timing diagrams illustrating operation of a DC-DCconverter.

FIGS. 4A and 4B are timing diagrams illustrating operation of a DC-DCconverter.

FIG. 5A is a top view of a transistor and FIG. 5B is a cross-sectionalview of the transistor.

FIG. 6 is a magnified view of part of the top view of the transistor.

FIG. 7 is a graph illustrating measurement values of drain current Id(A) versus gate voltage Vgs (V).

FIG. 8 is a graph illustrating a relation of output power Wout (W) andpower conversion efficiency (%).

FIG. 9 is a diagram illustrating an example of a structure of an outputvoltage control circuit.

FIG. 10 is a diagram illustrating an example of a structure of a backgate control circuit.

FIGS. 11A and 11B are diagrams each illustrating an example of astructure of a DC-DC converter.

FIG. 12 is a diagram illustrating a structure of a lighting device.

FIG. 13 is a diagram illustrating a structure of a solar cell.

FIGS. 14A to 14D are diagrams illustrating a method for fabricating asemiconductor device.

FIGS. 15A and 15B are diagrams each illustrating a structure of atransistor.

FIG. 16 is a circuit diagram of a characteristics evaluation circuit.

FIG. 17 is a timing diagram of the characteristics evaluation circuit.

FIG. 18 is a graph illustrating a relation between elapsed time Time anda potential Vout of an output signal in the characteristics evaluationcircuit.

FIG. 19 is a graph illustrating a relation between elapsed time Time andleakage current measured in the characteristics evaluation circuit.

FIG. 20 is a graph illustrating a relation between a potential of a nodeA and leakage current in the characteristics evaluation circuit.

FIGS. 21A to 21D are diagrams each illustrating an electronic device.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. However, the presentinvention is not limited to the following description and it is easilyunderstood by those skilled in the art that the mode and details can bevariously changed without departing from the scope and spirit of thepresent invention. Accordingly, the invention should not be construed asbeing limited to the description of the embodiments below.

Note that the present invention includes, in its category, all thesemiconductor devices in which a DC-DC converter or a power supplycircuit can be used: for example, integrated circuits such asmicroprocessors and image processing circuits, RF tags, memory media,solar cells, lighting devices including light-emitting elements, andsemiconductor display devices. Further, the semiconductor displaydevices include semiconductor display devices including the DC-DCconverter and the power supply circuit, such as liquid crystal displaydevices, lighting devices in which a light-emitting element typified byan organic light-emitting element (OLED) is provided for each pixel,electronic paper, digital micromirror devices (DMD), plasma displaypanels (PDP), field emission displays (FED), and the like, in itscategory.

Embodiment 1

FIG. 1A illustrates an example of a structure of a DC-DC converteraccording to an embodiment of the present invention.

A DC-DC converter 100 illustrated in FIG. 1A includes a power conversioncircuit 101 which generates a constant voltage (output voltage) by theuse of voltage applied to an input terminal IN (input voltage) andoutputs the constant voltage from an output terminal OUT. The powerconversion circuit 101 includes a constant-voltage generation portion103 and a transistor 102 functioning as a switching element.

When the transistor 102 is on, the input voltage is supplied to theconstant-voltage generation portion 103. When the transistor 102 is off,the input voltage is not supplied to the constant-voltage generationportion 103. When the transistor 102 is turned off, a fixed voltage suchas a ground potential is supplied to the constant-voltage generationportion 103. Therefore, in response to switching of the transistor 102,a pulsed signal in which the input voltage and a fixed voltage arealternated is supplied to the constant-voltage generation portion 103.

The constant-voltage generation portion 103 includes any one or more ofa coil, a capacitor, and a diode. The constant-voltage generationportion 103 generates a constant-output voltage by smoothing or holdingthe voltage of the signal when a pulsed signal is supplied.

Further, the DC-DC converter 100 illustrated in FIG. 1A includes anoutput voltage control circuit 104 for controlling the ratio of on timeto off time of the transistor 102. The output voltage control circuit104 controls the ratio of on time to off time of the transistor 102, sothat a percentage of periods in which pulses are generated, that is, aduty ratio, in a pulsed signal supplied to the constant-voltagegeneration portion 103 can be controlled.

Switching of the transistor 102 can be controlled by a voltage Vgsbetween a gate electrode and a source electrode of the transistor 102.The output voltage control circuit 104 controls a variation in thevoltage Vgs over time to control the ratio of on time to off time of thetransistor 102.

When the duty ratio varies, the output voltage varies. Specifically, theincrease in percentage of periods in which pulses of the input voltageare generated results in the increase in difference between the outputvoltage and a fixed voltage. In contrast, the decreases in percentage ofperiods in which pulses of the input voltage are generated leads to thedecrease in difference between the output voltage and a fixed voltage.

Note that in an embodiment of the present invention, the transistor 102includes a back gate electrode for controlling the threshold voltage ofthe transistor 102 in addition to a general gate electrode.Specifically, the transistor 102 includes a semiconductor filmfunctioning as an active layer, the gate electrode, and the back gateelectrode overlapping with the gate electrode with the semiconductorfilm therebetween. Further, the transistor 102 includes an insulatingfilm formed between the gate electrode and the semiconductor film, aninsulating film formed between the back gate electrode and thesemiconductor film, and a source electrode and a drain electrode whichare in contact with the semiconductor film.

In addition, the DC-DC converter illustrated in FIG. 1A includes a backgate control circuit 105 for controlling the potential applied to theback gate electrode of the transistor 102. The threshold voltage of thetransistor 102 can be controlled by adjusting the back gate voltage Vbgsbetween the back gate electrode and the source electrode. Further, theback gate control circuit 105 adjusts the back gate voltage Vbgs bycontrolling the potential applied to the back gate electrode inaccordance with power (output power) output from the DC-DC converter100, thereby controlling the threshold voltage of the transistor 102 inaccordance with the output power.

Specifically, in the case of high output power (i.e., when the outputpower of the DC-DC converter exceeds over the predetermined value), theback gate control circuit 105 makes the back gate voltage Vbgs high toshift the threshold voltage in a negative direction to reduce theon-state resistance of the transistor 102. On the other hand, in thecase of low output power (i.e., when the output power of the DC-DCconverter is equal to or smaller than a predetermined value), the backgate control circuit 105 makes the back gate voltage Vbgs low to shiftthe threshold voltage in a positive direction to reduce the on-stateresistance of the transistor 102.

With the above structure, in the case of low output power of the DC-DCconverter 100, the power loss due to the off-state current of thetransistor 102 is preferentially suppressed to be low over the reductionin power loss due to the on-state resistance of the transistor 102,whereby reduction in power conversion efficiency can be prevented. Onthe other hand, in the case of high output power of the DC-DC converter100, the power loss due to the on-state resistance of the transistor 102is preferentially suppressed to be low over the power loss due to theoff-state current of the transistor 102, whereby reduction in powerconversion efficiency can be prevented.

Unless otherwise specified, in this specification, the off-state currentof an n-channel transistor is current which flows between a sourceelectrode and a drain electrode when the potential of the gate electrodeis less than or equal to zero, in the case where a potential of thedrain electrode is higher than that of the source electrode and that ofa gate electrode, and a reference potential is the potential of thesource electrode. Alternatively, in this specification, the off-statecurrent of a p-channel transistor is current which flows between asource electrode and a drain electrode when the potential of the gateelectrode is greater than or equal to zero in the case where a potentialof the drain electrode is lower than that of the source electrode orthat of a gate electrode, and a reference potential is the potential ofthe source electrode.

In the DC-DC converter 100 according to an embodiment of the presentinvention, the semiconductor film of the transistor 102 includes a widegap semiconductor material with a wider band gap than that of a siliconsemiconductor and a lower intrinsic carrier density than that ofsilicon. Note that as examples of a wide-gap semiconductor, a compoundsemiconductor such as silicon carbide (SiC) or gallium nitride (GaN), anoxide semiconductor including a metal oxide such as zinc oxide (ZnO),and the like can be given. However, compound semiconductors such assilicon carbide and gallium nitride are required to be single crystal,and it is difficult to meet the fabricating condition to obtain a singlecrystal material; for example, crystal growth at a temperature extremelyhigher than a process temperature of the oxide semiconductor is neededor epitaxial growth over a special substrate is needed. In addition, itis difficult to form such compound semiconductors over a silicon waferor a glass substrate with low heat resistance, which can be obtainedeasily. On the other hand, the oxide semiconductor is advantageous inthat it can be formed by a sputtering method or a wet method (such as aprinting method) and has high mass productivity. Thus, an oxidesemiconductor film can be formed at a room temperature; accordingly, theoxide semiconductor film can be formed over a glass substrate or over anintegrated circuit including a semiconductor element, and moreover, sucha substrate can be large. Accordingly, among the semiconductors withwide band gaps, the oxide semiconductor particularly has an advantage ofhigh mass productivity. Further, in the case where an oxidesemiconductor with high crystallinity is to be obtained in order toimprove the property of a transistor (e.g., field-effect mobility), theoxide semiconductor with crystallinity can be obtained by heat treatmentat 200° C. to 800° C.

In the following description, the case where an oxide semiconductorhaving the above advantages is used as the semiconductor having a wideband gap is given as an example.

With a channel formation region including a semiconductor materialhaving the above characteristics, the transistor 102 with an extremelylow off-state current and high withstand voltage can be realized.Further, the transistor 102 with the above-mentioned structure is usedas a switching element, deterioration of the switching element due toapplication of high voltage can be prevented in the case of high outputpower, and an off-state current can be suppressed to be extremely low inthe case of low output power.

A cross-sectional view of FIG. 1B illustrates an example of a structureof the transistor 102 which is a top-gate transistor and has achannel-etched structure.

The transistor 102 illustrated in FIG. 1B includes, over a substrate 120having an insulating surface, a gate electrode 110, an insulating film111 which is formed over the gate electrode 110, a semiconductor film112 which overlaps with the gate electrode 110 with the insulating film111 therebetween, a source electrode 113 and a drain electrode 114 whichare formed over the semiconductor film 112, an insulating film 115 whichis formed over the semiconductor film 112, the source electrode 113, andthe drain electrode 114, and a back gate electrode 116 which is formedso as to overlap with the semiconductor film 112 with the insulatingfilm 115 therebetween. Moreover, the back gate electrode 116 may becovered with an insulating film 117 and the transistor 102 may beregarded as including the insulating film 117 as its component.

As an example, the transistor 102 in FIG. 1B illustrates the case wherethe transistor 102 is a bottom-gate transistor and has a channel-etchedstructure. Part of the semiconductor film 112 which is between thesource electrode 113 and the drain electrode 114, that is, part of thesemiconductor film 112 with which neither the source electrode 113 northe drain electrode 114 overlaps, is etched.

Although FIG. 1B illustrates an example of the case where the transistor102 is a single-gate structure, the transistor 102 may be a multi-gatetransistor in which a plurality of gate electrodes 110 electricallyconnected to each other are included so that a plurality of channelformation regions are included.

By using an oxygen-containing inorganic material such as silicon oxideand silicon oxynitride for the insulating film 115 which is in contactwith the semiconductor film 112, even if oxygen deficiency in thesemiconductor film 112 is generated due to heat treatment for reductionin moisture and hydrogen, oxygen can be supplied from the insulatingfilm 115 to the semiconductor film 112, thereby reducing the oxygendeficiency as a donor to satisfy the stoichiometric composition of thesemiconductor material. It is preferred that the semiconductor film 112contains oxygen whose composition exceeds the stoichiometric one. As aresult, the semiconductor film 112 can be made to be substantiallyi-type and a variation in electric characteristics of the transistor 102due to oxygen deficiency can be reduced, which results in improvement ofthe electric characteristics.

Alternatively, heat treatment may be performed on the semiconductor film112 in an oxygen atmosphere to add oxygen to the oxide semiconductor sothat the oxygen deficiency that serves as a donor in the semiconductorfilm 112 is reduced. The heat treatment is performed at a temperatureof, for example, higher than or equal to 100° C. and lower than 350° C.,preferably higher than or equal to 150° C. and lower than 250° C. It ispreferable that an oxygen gas used for the heat treatment under anoxygen atmosphere do not include water, hydrogen, or the like.Alternatively, the purity of the oxygen gas which is introduced into theheat treatment apparatus is preferably greater than or equal to 6N(99.9999%) or more preferably greater than or equal to 7N (99.99999%)(that is, the impurity concentration in the oxygen is less than or equalto 1 ppm, or preferably less than or equal to 0.1 ppm).

Alternatively, an ion implantation method, an ion doping method, or thelike may be employed to add oxygen to the semiconductor film 112 so thatoxygen deficiency as a donor is reduced. For example, oxygen made to beplasma with a microwave of 2.45 GHz may be added to the semiconductorfilm 112.

Note that, in this specification, an oxynitride compound contains ahigher amount of oxygen than that of nitrogen, and a nitride oxidecompound contains a higher amount of nitrogen than that of oxygen.

Next, an example of a specific structure of the power conversion circuit101 will be described.

Note that the term “connection” in this specification refers toelectrical connection: the state in which current, a potential, orvoltage can be supplied or transmitted. Accordingly, connection meansnot only direct connection but also indirect connection through acircuit element such as a wiring, a resistor, a diode, or a transistorso that current, a potential, or voltage can be supplied or transmitted.

In addition, even when different components are connected to each otherin a circuit diagram, there is actually a case where one conductive filmhas functions of a plurality of components such as a case where part ofa wiring serves as an electrode. The term “connection” also means such acase where one conductive film has functions of a plurality ofcomponents.

The names of the “source electrode” and the “drain electrode” includedin the transistor interchange with each other depending on the polarityof the transistor or difference between the potentials applied to therespective electrodes. In general, in an n-channel transistor, anelectrode to which a lower potential is applied is called a sourceelectrode, and an electrode to which a higher potential is applied iscalled a drain electrode. Further, in a p-channel transistor, anelectrode to which a lower potential is applied is called a drainelectrode, and an electrode to which a higher potential is applied iscalled a source electrode. Hereinafter, one of a source electrode and adrain electrode is a first terminal and the other is a second terminal Astructure of the DC-DC converter will be described below.

The DC-DC converter according to an embodiment of the present inventionmay be a step-up DC-DC converter which outputs the output voltage higherthan an input voltage or a step-down DC-DC converter which outputs theoutput voltage lower than the input voltage. FIG. 2A illustrates astructure of a step-down DC-DC converter.

In the DC-DC converter illustrated in FIG. 2A, the constant-voltagegeneration portion 103 includes a diode 130, a coil 131, and a capacitor132. Further, the DC-DC converter in FIG. 2A includes an input terminalIN1 supplied with the input voltage, an input terminal IN2 supplied witha fixed voltage, an output terminal OUT1, and an output terminal OUT2.

The transistor 102 controls connection between the input terminal IN1and a cathode of the diode 130. Specifically, a first terminal of thetransistor 102 is connected to the input terminal IN1 and a secondterminal of the transistor 102 is connected to the cathode of the diode130. One of terminals of the coil 131 is connected to the cathode of thediode 130 and the other of the terminals of the coil 131 is connected tothe output terminal OUT1 of the DC-DC converter. The input terminal IN2is connected to an anode of the diode 130 and the output terminal OUT2.One of electrodes of the capacitor 132 is connected to the outputterminal OUT1 and the other of the electrodes of the capacitor 132 isconnected to the output terminal OUT2.

In the DC-DC converter in FIG. 2A, when the transistor 102 is turned on,a potential difference between the input terminal IN1 and the outputterminal OUT1 is generated; thus, current flows through the coil 131.The coil 131 is magnetized by the current flow, and electromotive forcein a direction opposite to that of the current flow is generated by selfinduction. Therefore, voltage which is obtained by decrease in the inputvoltage supplied to the input terminal IN1 is supplied to the outputterminal OUT1. In other words, between the pair of electrodes of thecapacitor 132, voltage corresponding to a difference between a fixedvoltage supplied from the input terminal IN2 and the voltage obtained bydecrease in the input voltage is provided.

When the transistor 102 is turned off, a current path formed between theinput terminal IN1 and the output terminal OUT1 is blocked. In the coil131, the electromotive force in the direction preventing the change ofthe current, that is, in the direction opposite to that of electromotiveforce generated when the transistor 102 is on is generated. Therefore,the current that flows to the coil 131 is kept by voltage generated bythe electromotive force. In other words, when the transistor 102 is off,a current path is formed between the output terminal OUT1 and the inputterminal IN2 or the output terminal OUT2 through the coil 131 and/or thediode 130. Accordingly, voltage applied between the pair of electrodesof the capacitor 132 is held to some extent.

Note that voltage held in the capacitor 132 corresponds to the voltageoutput from the output terminal OUT1. In the above operation, as apercentage of on time of the transistor 102 is higher, voltage held inthe capacitor 132 becomes close to a difference between the fixedvoltage and the input voltage. Accordingly, the voltage can be decreasedso that the output voltage close to that of the input voltage isobtained. In contrast, as a percentage of off time of the transistor 102is higher, a difference between the fixed voltage and the voltage heldin the capacitor 132 becomes smaller. Accordingly, the voltage can bedecreased so that the output voltage close to that of the fixed voltageis obtained.

Next, FIG. 2B illustrates a structure of the step-up DC-DC converter.

In the DC-DC converter illustrated in FIG. 2B, the constant-voltagegeneration portion 103 includes the diode 130, the coil 131, and thecapacitor 132. Further, the DC-DC converter in FIG. 2B includes theinput terminal IN1 supplied with the input voltage, the input terminalIN2 supplied with a fixed voltage, the output terminal OUT1, and theoutput terminal OUT2.

The one of the terminals of the coil 131 is connected to the inputterminal IN1 and the other of the terminals of the coil 131 is connectedto the anode of the diode 130. The transistor 102 controls connectionbetween the input terminal IN2 or the output terminal OUT2 and a nodebetween the coil 131 and the diode 130. Specifically, the first terminalof the transistor 102 is connected to the node between the coil 131 andthe diode 130, and the second terminal of the transistor 102 isconnected to the input terminal IN2 and the output terminal OUT2. Thecathode of the diode 130 is connected to the output terminal OUT1. Theone of the pair of electrodes of the capacitor 132 is connected to theoutput terminal OUT1 and the other of the electrodes of the capacitor132 is connected to the output terminal OUT2.

In the DC-DC converter illustrated in FIG. 2B, when the transistor 102is turned on, current flows to the coil 131 because of a potentialdifference between the input terminal IN1 and the input terminal IN2.The coil 131 is magnetized because the current flows thereto. Note thatin the coil 131, electromotive force in an opposite direction to that ofthe current flow is generated by self induction, so that the current isgradually increased.

Next, when the transistor 102 is turned off, a current path formedbetween the input terminal IN1 and the input terminal IN2 is blocked. Inthe coil 131, the electromotive force in the direction preventing thechange of the current, that is, in the direction opposite to that ofelectromotive force generated when the transistor 102 is on isgenerated. Therefore, voltage corresponding to the current flowing tothe coil 131 when the transistor 102 is on is generated between the pairof the terminals of the coil 131. Then, current flowing through the coil131 is held by voltage generated between the terminals. In other words,when the transistor 102 is off, a current path is formed between theinput terminal IN1 and the output terminal OUT1 through the coil 131 andthe diode 130. At this time, voltage which is the sum of the inputvoltage applied to the input terminal IN1 and the voltage generatedbetween the terminals of the coil 131 is supplied to the output terminalOUT1, and the voltage is output from the DC-DC converter. Voltagecorresponding to a difference between the voltage of the output terminalOUT1 and the fixed voltage is held between the electrodes of thecapacitor 132.

In the above operation, when a percentage of on time of the transistor102 is high, current flowing through the coil 131 is large. Therefore,voltage between the terminals of the coil 131 is high when thetransistor 102 is turned off, which allows the boosting in voltage sothat a difference between the output voltage and the input voltage isincreased. In contrast, as a percentage of off time of the transistor102 is higher, current flowing to the coil 131 is small. Therefore,voltage between the terminals of the coil 131 is low when the transistor102 is turned off, which allows the boosting in voltage so that adifference between the output voltage and the input voltage is reduced.

Note that although FIGS. 1A and 1B and FIGS. 2A and 2B show a structurein which the constant-voltage generation portion 103 includes onetransistor 102 functioning as a switching element, the present inventionis not limited to this structure. In this embodiment of the presentinvention, a plurality of transistors may function as one switchingelement. In the case where the plurality of transistors functioning asone switching element is provided, the plurality of transistors may beconnected to each other in parallel, in series, or in combination of aparallel connection and a series connection. In any case, in one or moreof the plurality of transistors, a potential applied to the back gateelectrode is controlled, and an off-state current or an on-stateresistance of the switching element is adjusted in accordance with theoutput power, whereby power conversion efficiency can be enhanced.

Note that in this specification, the state where the transistors areconnected to each other in series means a state where only one of afirst terminal and a second terminal of a first transistor is connectedto only one of a first terminal and a second terminal of a secondtransistor. Further, the state in which the transistors are connected toeach other in parallel refers to the state in which the first terminalof the first transistor is connected to the first terminal of the secondtransistor and the second terminal of the first transistor is connectedto the second terminal of the second transistor.

Note that switching of the transistor 102 may be performed by pulsewidth control (PWM) or pulse frequency control (PFM).

FIG. 3A illustrates an example of a change over time of the gate voltageVgs of the transistor 102 in the case of using pulse width control. InFIG. 3A, the gate voltage Vgs is pulsed voltage, and a pulse width Tonbecomes gradually wider as time passes. In the case of the pulse widthcontrol, the time interval Tp between timings at which pulses aregenerated is constant and the pulse width Ton is variable.

FIG. 3B illustrates a change over time of output power Wout obtainedwhen the switching of the transistor 102 is performed in accordance withthe change of the gate voltage Vgs illustrated in FIG. 3A. Asillustrated in FIG. 3B, as the pulse width Ton is increased, higheroutput power Wout can be obtained.

Note that in an embodiment of the present invention, the potentialapplied to the back gate electrode is controlled in accordance with thestrength of the output power Wout, so that the back gate voltage Vbgsbetween the back gate electrode and the source electrode is adjusted. Asan example, FIG. 3C illustrates a change over time of the back gatevoltage Vbgs in the case where the output power Wout varies over time asillustrated in FIG. 3B.

In FIG. 3C, the back gate voltage Vbgs is increased stepwise. In otherwords, the back gate voltage Vbgs is low in the case where the outputpower Wout is low, and the back gate voltage Vbgs is high in the casewhere the output power Wout is high. Accordingly, in the case of lowoutput power Wout, power loss due to the off-state current of thetransistor 102 is preferentially suppressed to be low by decreasing theback gate voltage Vdgs to shift the threshold voltage of the transistor102 in a positive direction, whereby reduction in power conversionefficiency can be prevented. In addition, in the case of high outputpower Wout, the power loss of the on-state resistance of the transistor102 is preferentially suppressed to be low by increasing the back gatevoltage Vbgs to shift the threshold voltage of the transistor 102,whereby reduction in power conversion efficiency can be prevented.

Note that although in FIG. 3C, the back gate voltage Vbgs has sevenlevels, an embodiment of the present invention is not limited thereto.As long as the back gate voltage Vbgs can be changed stepwise, theabove-described effect can be realized.

As another example, FIG. 3D illustrates a change over time of the backgate voltage Vbgs in the case where the output power Wout varies overtime as illustrated in FIG. 3B. In FIG. 3D, the back gate voltage Vbgsis increased linearly over time.

Alternatively, the back gate voltage Vbgs may be varied in a pulsedmanner as the gate voltage Vgs of the transistor 102. In this case, itis preferable that the back gate voltage Vbgs be controlled so that aperiod in which a pulse of the gate voltage Vgs appears and a period inwhich a pulse of the back gate voltage Vbgs appears overlap with eachother.

FIG. 4A illustrates an example of a change over time of the gate voltageVgs of the transistor 102 in the case of employing the pulse frequencycontrol. In FIG. 4A, pulsed voltage is applied to the gate voltage Vgsand the time interval Tp between timings at which pulses are generatedis smaller as time passes. In the case of the pulse frequency control,the pulse width Ton is kept constant and the time interval Tp betweentimings at which pulses are generated is variable.

FIG. 4B illustrates a change over time of the output power Wout obtainedwhen switching of the transistor 102 is performed in accordance with thegate voltage Vgs illustrated in FIG. 4A. As illustrated in FIG. 4B, asthe time interval Tp between timings at which pulses are generated issmaller as time passes, output power Wout is increased.

Note that in an embodiment of the present invention, the output powermay be adjusted by a combination of the pulse width control and thepulse frequency control which are utilized for switching of thetransistor 102. In the case of low output power, the frequency ofswitching of the transistor 102 can be suppressed to be low by the pulsefrequency control rather than by the pulse width control; accordingly,the power loss due to switching of the transistor 102 is suppressed tobe low. In contrast, in the case of high output power, the frequency ofswitching of the transistor 102 can be suppressed to be low by the pulsewidth control rather than by the pulse frequency control; accordingly,power loss due to the switching of the transistor 102 is suppressed tobe low. Therefore, the pulse width control and the pulse frequencycontrol may be switched depending on the amount of the output power,whereby power conversion efficiency can be enhanced.

Embodiment 2

In this embodiment, a structure and characteristics of a transistorincluded in the DC-DC converter of this embodiment of the presentinvention, and the measurement of the power conversion efficiency of theDC-DC converter including the transistor will be described.

FIG. 5A is an example of a top view of a transistor included in theDC-DC converter according to an embodiment of the present invention.FIG. 5B illustrates a cross-sectional view taken along dashed line A1-A2in the top view of FIG. 5A.

A transistor in FIGS. 5A and 5B includes the following over a glasssubstrate 500: an insulating film 501, a back gate electrode 502 whichis over the insulating film 501, an insulating film 503 which is overthe back gate electrode 502, a semiconductor film 504 which overlapswith the back gate electrode 502 with the insulating film 503 providedtherebetween, a source electrode 505 and a drain electrode 506 which areover the semiconductor film 504, an insulating film 507 which covers thesemiconductor film 504, the source electrode 505, and the drainelectrode 506, a gate electrode 508 which is over the insulating film507 and which overlaps with the back gate electrode 502 and thesemiconductor film 504.

Note that in FIG. 5A, the insulating film 501, the insulating film 503,and the insulating film 507 are omitted to illustrate the structure ofthe transistor clearly.

Specifically, the insulating film 501 contains silicon oxynitride andhas a thickness of approximately 100 nm. The back gate electrode 502contains tungsten and has a thickness of 150 nm. The insulating film 503contains silicon oxide and has a thickness of 100 nm. The semiconductorfilm 504 contains an In—Ga—Zn—O-based oxide semiconductor and has athickness of 50 nm. The source electrode 505 and the drain electrode 506each contain titanium and have a thickness of 150 nm. The insulatingfilm 507 contains silicon oxide and has a thickness of 300 nm. The gateelectrode 508 contains indium tin oxide including silicon oxide (ITSO)and has a thickness of 150 nm.

Note that as illustrated in FIG. 5B, a channel formation region is aregion 510 in the semiconductor film 504, which overlaps with the gateelectrode 508 and which presents between the source electrode 505 andthe drain electrode 506. FIG. 6 illustrates a magnified view of thevicinity of the channel formation region of the transistor in FIG. 5A.Note that in FIG. 6, the back gate electrode 502 is omitted.

As illustrated in FIG. 6, in the transistor described in thisembodiment, the shapes of the source electrode 505 and the drainelectrode 506, which are viewed from above, each have a comb shape withprojections and depressions. Further, the source electrode 505 and thedrain electrode 506 are provided so that projections and depressions ofthe comb shapes, which are parallel to a surface of the substrate 500engage with each other and a certain channel length L is kept.Furthermore, a channel width W is the length of the channel formationregion in a direction perpendicular to a direction of carrier flow. InFIG. 6, the channel width W corresponds to the length of a dashed lineW1-W2.

In this embodiment, the channel length L is 3 μm and the channel width Wis 10 cm.

FIG. 7 illustrates measurement values of drain current Id (A) withrespect to the gate voltage Vgs (V) of the transistor with each of thestructures in FIG. 5A, FIG. 5B, and FIG. 6. In measurement, the voltageVds between the source electrode 505 and the drain electrode 506 is 5 V.FIG. 7 illustrates measurement values in the case where the back gatevoltage Vbgs between the back gate electrode and the source electrode ofthe transistor is −2.5 V, 0 V, and 5 V.

As illustrated in FIG. 7, as the back gate voltage Vbgs becomes lower,the threshold voltage of the transistor is shifted to the positive sideand the off-state current is reduced. Further, as the back gate voltageVbgs becomes higher, the threshold voltage of the transistor is shiftedto the negative side and the off-state current is increased, that is,on-state resistance is reduced.

Then, the power conversion efficiency of a DC-DC converter including thetransistor as a switching element was measured. A power conversioncircuit included in the DC-DC converter and used for the measurement hasthe same structure as the power conversion circuit 101 included in theDC-DC converter in FIG. 2B.

Switching of the transistor 102 was controlled by setting the gatevoltage Vgs to 0 V or 5 V. A duty ratio was adjusted by the pulse widthcontrol and the frequency of timings at which pulses are generated wasset to 97 Hz. Note that the duty ratio corresponds to the percentage ofa period in which the gate voltage Vgs of the transistor 102 is 5 V,that is, a period in which the transistor 102 is on, within a certainlength of a period. Moreover, the input voltage applied to the inputterminal IN1 and the output voltage applied to the output terminal OUT1were fixed at 5 V and 10 V, respectively. Then, the duty ratio wasvaried from 40% to 68% and a relation between output power Wout (W) andpower conversion efficiency (%) was measurement.

FIG. 8 illustrates the relation between output power Wout (W) and powerconversion efficiency (%), which was obtained by the measurement. Asshown in FIG. 8, when the output power Wout is low, the decrease in theback gate voltage Vbgs results in high power conversion efficiency. Onthe other hand, the power conversion efficiency increases withincreasing output power Wout regardless of the back gate voltage Vbgs.However, in the case of low back gate voltage Vbgs, the increase in thepower conversion efficiency is saturated and then decreased withincreasing output power Wout. In contrast, when the back gate voltageVbgs is as high as 5 V or 10 V, such a saturation of the increase inpower conversion efficiency is not observed, resulting in high powerconversion efficiency compared with the case of low back gate voltageVbgs such as −2.5 V or 0 V.

Hence, in an embodiment of the present invention, as shown in theresults illustrated in FIG. 8, with the structure in which the back gatevoltage Vbgs is increased in the case of high output power and the backgate voltage Vbgs is decreased in the case of low output power, a DC-DCconverter or a power supply circuit having high power conversionefficiency can be obtained.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

Embodiment 3

In this embodiment, an example of a structure of an output voltagecontrol circuit in the case of employing the pulse width control will bedescribed.

FIG. 9 schematically illustrates an example of a structure of an outputvoltage control circuit. The output voltage control circuit 104 in FIG.9 includes a resistor 200, a resistor 201, an error amplifier 202, aphase compensation circuit 203, a comparator 204, a triangle wavegenerator 205, and a buffer 206.

The resistor 200 and the resistor 201 are connected in series. One ofterminals of the resistor 200 is supplied with the output voltage fromthe output terminal OUT1 of the DC-DC converter. One of terminals of theresistor 201 is supplied with a fixed potential such as a groundpotential. A node in which the other of the terminals of the resistor200 and the other of the terminals of the resistor 201 are connected isconnected to an inverting input terminal (−) of the error amplifier 202.Therefore, the output voltage from the output terminal OUT1 is subjectedto resistor division by the resistor 200 and the resistor 201, and issupplied to the inverting input terminal (−) of the error amplifier 202.

A non-inverting input terminal (+) of the error amplifier 202 issupplied with a reference voltage Vref1. In the error amplifier 202, thevoltage applied to the inverting input terminal (−) and the referencevoltage Vref1 are compared and the difference is amplified; then, theamplified difference is output from an output terminal of the erroramplifier 202.

The voltage output from the error amplifier 202 is supplied to the phasecompensation circuit 203. The phase compensation circuit 203 controls aphase of voltage output from the error amplifier 202. The phase of thevoltage is controlled by the phase compensation circuit 203, so thatoscillation of the output voltage of an amplifier such as the erroramplifier 202 or the comparator 204 is prevented and the operation ofthe DC-DC converter can be stabilized.

The voltage output from the phase compensation circuit 203 is suppliedto the non-inverting input terminal (+) of the comparator 204. To theinverting input terminal (−) of the comparator 204, a signal with atriangle wave or a sawtooth wave which is output from the triangle wavegenerator 205 is supplied. The comparator 204 generates a signal with arectangle wave which has a constant frequency and which has a pulsewidth varying in accordance with the voltage applied to thenon-inverting input terminal (+). The signal with a rectangle waveoutput from the comparator 204 is output from the output voltage controlcircuit 104 to a gate electrode of the transistor 102 through the buffer206.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

Embodiment 4

In this embodiment, an example of a structure of a back gate controlcircuit is described.

FIG. 10 schematically illustrates an example of a structure of a backgate control circuit. The back gate control circuit 105 in FIG. 10includes a current detection circuit 210 detecting the amount of currentoutput from the output terminal OUT1, and a power-voltage conversioncircuit 216 which determines the potential of the back gate electrodefrom the amount of the current detected by the current detection circuit210 and the output voltage from the output terminal OUT1.

Specifically, FIG. 10 illustrates a case where the current detectioncircuit 210 includes a CT (current transformer) sensor 211, a rectifier212, and an integrating circuit 213. The CT sensor 211 is provided inadjacent to a conductor such as a wiring which supplies current to theoutput terminal OUT1. When magnetic flux is generated around theconductor by current flow through the conductor, the currentcorresponding to the amount of current is generated in the CT sensor211, obeying the principle of the transformer. For example, assumingthat the current flowing to the output terminal OUT1 is I₀ and thecurrent generated in the CT sensor 211 is Ict, I₀:Ict=N:1 (N>>1) issatisfied. In other words, the CT sensor 211 can generate the extremelylow current Ict in proportion to the current I₀.

The rectifier 212 rectifies the current generated in the CT sensor 211and sends the current to the integrating circuit 213. The integratingcircuit 213 includes a resistor 214 and a capacitor 215, which areconnected in parallel and are provided between the rectifier 212 and anode supplied with a fixed voltage, and functions as a low-pass filter.Accordingly, the integrating circuit 213 converts current rectified bythe rectifier 212 into voltage, and outputs the voltage after averagingit. The voltage Vct output from the integrating circuit 213 is appliedto the power-voltage conversion circuit 216.

FIG. 10 illustrates a case where the power-voltage conversion circuit216 includes a comparator 217, an inverter 220, a power source 221, andtransistors 218 and 219 functioning as switching elements.

The non-inverting input terminal (+) of the comparator 217 is suppliedwith the voltage Vct output from the integrating circuit 213, and theinverting input terminal (−) of the comparator 217 is supplied with theoutput voltage of the output terminal OUT1 or voltage corresponding tothe voltage of the output terminal OUT1 as a reference voltage Vref2.The comparator 217 compares the inputted voltage Vct and the referencevoltage Vref2, thereby outputting a high-level voltage in the case ofthe voltage Vct>the reference voltage Vref2 and outputting a low-levelvoltage in the case of the voltage Vct the reference voltage Vref2.

The voltage output from the comparator 217 is supplied to a gateelectrode of the transistor 219. Further, the voltage output from thecomparator 217 is inverted in the inverter 220 and is applied to a gateelectrode of the transistor 218. Accordingly, in the case where thevoltage output from the comparator 217 is in a high level, thetransistor 218 is turned off and the transistor 219 is turned on; thus,the potential Vbg1 from the power source 221 is output from thepower-voltage conversion circuit 216. In the case where the voltageoutput from the comparator 217 is in a low level, the transistor 218 isturned on and the transistor 219 is turned off; thus, a potential Vbg2which is a ground potential is output from the power-voltage conversioncircuit 216. Note that although the potential Vbg2 is the groundpotential in this embodiment, the potential Vbg2 may be a potentialother than the ground potential.

The potential Vbg1 or the potential Vbg2 output from the power-voltageconversion circuit 216 is output from the back gate control circuit 105and is supplied to the back gate electrode of the transistor 102 in FIG.1A, for example. In other words, the potential supplied to the back gateelectrode of the transistor 102 can vary by the back gate controlcircuit 105 in accordance with the output power of the DC-DC converter.

In an embodiment of the present invention, a potential supplied to theback gate electrode varies in accordance with the current and voltage ofthe output terminal OUT1, whereby the threshold voltage can be adjustedto decrease the on-state resistance of the transistor 102 in the case ofhigh output power and to decrease the off-state current of thetransistor 102 in the case of low output power. Accordingly, the powerconversion efficiency of the DC-DC converter can be improved. Asillustrated in an embodiment of the present invention, the output powerof the DC-DC converter is monitored and the potential of the back gateelectrode is controlled in accordance with the output power, whereby thepotential of the back gate electrode can be set to have a moreappropriate value in comparison with the case where only the outputvoltage of the DC-DC converter is monitored. As a result, powerconversion efficiency can be enhanced.

Further, by using the DC-DC converter, the power conversion efficiencyof a power supply circuit can be improved. In addition, the powerconversion efficiency of the DC-DC converter is improved; therefore,power consumption of a semiconductor device including the DC-DCconverter can be suppressed.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

Embodiment 5

In this embodiment, an example of a DC-DC converter having the powerconversion circuit 101 with a different structure from that in the DC-DCconverter illustrated in FIGS. 2A and 2B will be described.

FIG. 11A illustrates a structure of a fly-back DC-DC converter. In theDC-DC converter in FIG. 11A, the constant-voltage generation portion 103includes the diode 130, the capacitor 132, and a transformer 133.Further, the DC-DC converter in FIG. 11A includes the input terminal IN1supplied with an input voltage, the input terminal IN2 supplied with afixed voltage, the output terminal OUT1, and the output terminal OUT2.

The transformer 133 includes a first coil and a second coil in which acommon core is provided for each of the centers of the coils. Thetransistor 102 controls connection between the input terminal IN2 andone of terminals of the first coil of the transformer 133. Specifically,a first terminal of the transistor 102 is connected to the inputterminal IN2, and a second terminal of the transistor 102 is connectedto the one of the terminals of the first coil of the transformer 133.The other of the terminals of the first coil of the transformer 133 isconnected to the input terminal IN1.

One of terminals the second coil of the transformer 133 is connected tothe anode of the diode 130 and the other of the terminals of the secondcoil is connected to the output terminal OUT2. The cathode of the diode130 is connected to the output terminal OUT1. One of electrodes of thecapacitor 132 is connected to the output terminal OUT1 and the other ofthe electrodes of the capacitor 132 is connected to the output terminalOUT2.

FIG. 11B illustrates a structure of a forward DC-DC converter. In theDC-DC converter in FIG. 11B, the constant-voltage generation portion 103includes the diode 130, a diode 134, the coil 131, the capacitor 132,and a transformer 135. Further, the DC-DC converter in FIG. 11B includesthe input terminal IN1 supplied with the input voltage, the inputterminal IN2 supplied with a fixed voltage, the output terminal OUT1,and the output terminal OUT2.

Like the transformer 133 in FIG. 11A, the transformer 135 includes afirst coil and a second coil in which a common core is provided for eachof the centers of the coils. Note that in the transformer 133, the startend of the first coil and the start end of the second coil are on theopposite side to each other; on the other hand, the start end of thefirst coil and the start end of the second coil are on the same side inthe transformer 135.

The transistor 102 controls connection between the input terminal IN2and one of terminals of the first coil of the transformer 135.Specifically, the first terminal of the transistor 102 is connected tothe input terminal IN2, and the second terminal of the transistor 102 isconnected to the one of the terminals of the first coil of thetransformer 135. The other of the terminals of the first coil of thetransformer 135 is connected to the input terminal IN1.

Further, one of terminals of the second coil of the transformer 135 isconnected to the anode of the diode 130 and the other of the terminalsof the second coil is connected to the output terminal OUT2. The cathodeof the diode 130 is connected to a cathode of the diode 134 and the oneof the terminals of the coil 131. An anode of the diode 134 is connectedto the output terminal OUT2. The other of the terminals of the coil 131is connected to the output terminal OUT1. The one of electrodes of thecapacitor 132 is connected to the output terminal OUT1 and the other ofthe electrodes of the capacitor 132 is connected to the output terminalOUT2.

Note that although the structures of the fly-back DC-DC converter andthe forward DC-DC converter are described in this embodiment, the DC-DCconverter according to an embodiment of the present invention is notlimited as long as a switching method is employed in which the outputvoltage is adjusted by using the duty ratio of a switching element.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

Embodiment 6

In this embodiment, an example of a lighting device which is one ofsemiconductor devices according to an embodiment of the presentinvention will be described. FIG. 12 illustrates an example of astructure of a lighting device.

The lighting device in FIG. 12 includes an AC power source 301, a switch302, a rectification circuit 303, the DC-DC converter 100, and alight-emitting element 304. The rectification circuit 303 and the DC-DCconverter 100 form a power supply circuit.

The DC-DC converter 100 in FIG. 12 has the same structure as that of thestep-down DC-DC converter in FIG. 2A. A lighting device according to anembodiment of the present invention does not necessarily include theDC-DC converter 100 in FIG. 2A, and can include a DC-DC converteraccording to an embodiment of the present invention other than the DC-DCconverter 100.

Specifically, in the lighting device in FIG. 12, AC voltage from the ACpower source 301 is supplied to the rectification circuit 303 throughthe switch 302, and rectified. DC voltage obtained by the rectificationis input to the DC-DC converter 100 and output after the level isadjusted. Description in Embodiment 1 with reference to FIG. 2A can bereferred to for specific operation of the DC-DC converter 100. In thisembodiment, the inputted voltage is decreased by the DC-DC converter100, and output.

The voltage output from the DC-DC converter 100 is supplied to thelight-emitting element 304, so that the light-emitting element 304 emitslight. As the light-emitting element 304, various light sources such asa light-emitting diode (LED) and an organic light-emitting element(OLED) can be used.

Although in FIG. 12, a lighting device in which the AC power source 301is used as a power source is illustrated, the present invention is notlimited thereto. As the power source, a DC power source may be usedinstead of an AC power source. Note that in the case of using a DC powersource, the rectification circuit 303 is not necessarily provided.

In addition, although in FIG. 12, a structure of a lighting device inwhich the AC power source 301 is used as a power source is illustrated,a lighting device according to an embodiment of the present inventiondoes not necessarily include a power source as its component.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

Embodiment 7

In this embodiment, an embodiment of a solar cell which is one ofsemiconductor devices according to an embodiment of the presentinvention will be described. FIG. 13 illustrates an example of astructure of a solar cell.

The solar cell in FIG. 13 includes a photodiode 350, a switch 351, acapacitor 352, the DC-DC converter 100, a pulse width modulation circuit353, an inverter 354, and a band pass filter 355.

The DC-DC converter 100 in FIG. 13 has the same structure as the step-upDC-DC converter in FIG. 2B. A solar cell according to an embodiment ofthe present invention does not necessarily include the DC-DC converter100 in FIG. 2A and can use a DC-DC converter according to an embodimentof the present invention other than the DC-DC converter 100.

Specifically, in the solar cell in FIG. 13, voltage is generated whenlight is delivered to the photodiode 350. The voltage smoothed by thecapacitor 352 is input to the DC-DC converter 100 through the switch351. Note that with the capacitor 352, the pulsed current generated byswitching of the switch 351 can be prevented from flowing through thephotodiode 350.

Then, the voltage input to the DC-DC converter 100 is output after thevoltage is adjusted by the DC-DC converter 100. Description inEmbodiment 1 with reference to FIG. 2B can be referred to for specificoperation of the DC-DC converter 100. In this embodiment, the level ofthe inputted voltage is increased by the DC-DC converter 100, andoutput.

The voltage output from the output terminal OUT1 of the DC-DC converter100 is DC voltage. The inverter 354 converts the DC voltage output fromthe DC-DC converter 100 to AC voltage, and outputs. FIG. 13 illustratesan example of a structure in which the inverter 354 includes fourtransistors 356 to 359 and four diodes 360 to 363.

Specifically, a first terminal of the transistor 356 is connected to theoutput terminal OUT1 of the DC-DC converter 100 and a second terminal ofthe transistor 356 is connected to a first terminal of the transistor357. A second terminal of the transistor 357 is connected to the outputterminal OUT2 of the DC-DC converter 100. A first terminal of thetransistor 358 is connected to the output terminal OUT1 of the DC-DCconverter 100 and a second terminal of the transistor 358 is connectedto a first terminal of the transistor 359. A second terminal of thetransistor 359 is connected to the output terminal OUT2 of the DC-DCconverter 100. The diodes 360 to 363 are connected to the transistors356 to 359 in parallel respectively. Specifically, the first terminalsof the transistors 356 to 359 are connected to anodes of the diodes 360to 363, respectively. The second terminals of the transistors 356 to 359are connected to cathodes of the diodes 360 to 363.

To the pulse width modulation circuit 353, the voltage output from theDC-DC converter 100 is supplied. The pulse width modulation circuit 353is operated by application of the voltage and generates a signal forcontrolling switching of the transistors 356 to 359.

The transistors 356 to 359 perform switching in accordance with thesignal from the pulse width modulation circuit 353, whereby AC voltagewith a PWM waveform is output from a node in which the second terminalof the transistor 356 and the first terminal of the transistor 357 inthe inverter 354 are connected and a node in which the second terminalof the transistor 358 and the first terminal of the transistor 359 inthe inverter 354 are connected.

Then, a high-frequency component is removed from the AC voltage outputfrom the inverter 354 by using the band pass filter 355, whereby ACvoltage with a sine wave can be obtained.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

Embodiment 8

In this embodiment, a method for fabricating a semiconductor deviceaccording to an embodiment of the present invention will be described.The semiconductor device includes a transistor including silicon and atransistor including an oxide semiconductor.

Note that in an embodiment of the present invention, it is onlynecessary that an oxide semiconductor is used for a transistorfunctioning as a switching element for controlling the output power ofthe DC-DC converter. The transistor other than the transistorfunctioning as a switching element can be formed through a normal CMOSprocess in which germanium, silicon, silicon germanium, single crystalsilicon carbide, or the like is used. For example, the transistorincluding silicon can be formed using a single crystal semiconductorsubstrate such as a silicon wafer, a silicon thin film which is formedby an SOI method, a silicon thin film which is formed by a vapordeposition method, or the like.

First, as illustrated in FIG. 14A, an n-channel transistor 704 and thep-channel transistor 705 are formed over an insulating surface of asubstrate 700 by a known CMOS fabricating method. In this embodiment,the case where the n-channel transistor 704 and the p-channel transistor705 are formed using a single crystal semiconductor film which isseparated from a single crystal semiconductor substrate is given as anexample.

A specific example of a fabricating method of a single crystalsemiconductor film is briefly described. First, an ion beam includingions which are accelerated by an electric field enters the singlecrystal semiconductor substrate and a fragile layer which is fragilebecause of local disorder of the crystal structure is formed in a regionat a certain depth from the surface of the semiconductor substrate. Thedepth at which the fragile layer is formed can be adjusted by theacceleration energy of the ion beam and the angle at which the ion beamenters. Then, the semiconductor substrate and the substrate 700 overwhich the insulating film 701 is formed are attached to each other sothat the insulating film 701 is provided therebetween. After thesemiconductor substrate and the substrate 700 overlap with each other, apressure of greater than or equal to 1 N/cm² and less than or equal to500 N/cm², preferably greater than or equal to 11 N/cm² and less than orequal to 20 N/cm² is applied to part of the semiconductor substrate andthe substrate 700 to attach both the substrates. When the pressure isapplied to a portion, bonding between the semiconductor substrate andthe insulating film 701 starts from the portion, which results inbonding of the entire surface where the semiconductor substrate and theinsulating film 701 are in contact with each other. Subsequently, heattreatment is performed, whereby very small voids that exist in thefragile layer are expanded and combined to form voids with a largevolume. As a result, the single crystal semiconductor film which is partof the semiconductor substrate is separated from the semiconductorsubstrate along the fragile layer. The heat treatment is performed at atemperature not exceeding the strain point of the substrate 700. Then,the single crystal semiconductor film is processed into a desired shapeby etching or the like, so that an island-shaped semiconductor film 702and an island-shaped semiconductor film 703 can be formed.

The n-channel transistor 704 is formed using the island-shapedsemiconductor film 702 over the insulating film 701, and the p-channeltransistor 705 is formed using the island-shaped semiconductor film 703over the insulating film 701. The n-channel transistor 704 includes agate electrode 706, and the p-channel transistor 705 includes a gateelectrode 707. The n-channel transistor 704 includes an insulating film708 between the island-shaped semiconductor film 702 and the gateelectrode 706. The p-channel transistor 705 includes the insulating film708 between the island-shaped semiconductor film 703 and the gateelectrode 707.

Although there is no particular limitation on a substrate which can beused as the substrate 700, it is necessary that the substrate have atleast enough heat resistance to heat treatment performed later. Forexample, a glass substrate fabricated by a fusion method or a floatmethod, a quartz substrate, a ceramic substrate, or the like can be usedas the substrate 700. Further, when the temperature of heat treatmentperformed later is high, a substrate having a strain point of greaterthan or equal to 730° C. is preferably used as the glass substrate.Further, a metal substrate such as a stainless-steel substrate or asubstrate in which an insulating film is formed on the surface of asilicon substrate may be used as well. Although a substrate formed of aflexible synthetic resin such as plastic generally has a lowerresistance temperature than the aforementioned substrates, it may beused as long as being resistant to a processing temperature duringfabricating steps.

Note that although the case where the n-channel transistor 704 and thep-channel transistor 705 are formed using the single crystalsemiconductor film is illustrated as an example in this embodiment, thepresent invention is not limited to this structure. For example, apolycrystalline or microcrystalline semiconductor film which is formedover the insulating film 701 by a vapor deposition method may be used.Alternatively, the above semiconductor film may be formed bycrystallization of amorphous silicon with a known technique. As theknown technique of crystallization, a laser crystallization method usinga laser beam and a crystallization method using a catalytic element aregiven. Alternatively, a crystallization method using a catalytic elementand a laser crystallization method may be combined. When aheat-resistant substrate such as a quartz substrate is used, acrystallization method combined with a thermal crystallization methodusing an electrically heated oven, a lamp annealing crystallizationmethod using infrared light, a crystallization method using a catalyticelement, or a high-temperature annealing method at approximately 950°C., may be used.

In FIG. 14A, after a conductive film is formed over the insulating film708, the conductive film is processed into a desired shape by etching orthe like, whereby a wiring 711 connected to the gate electrode 701 isformed together with the gate electrode 709 and the gate electrode 710.

Next, as illustrated in FIG. 14A, an insulating film 712 is formed so asto cover the n-channel transistor 704, the p-channel transistor 705, andthe wiring 711. Note that although the case where the insulating film712 is formed in a single layer is illustrated as an example in thisembodiment, the insulating film 712 is not necessarily a single layerand insulating films of two or more layers may be stacked as theinsulating film 712.

The insulating film 712 is formed using materials which can withstand atemperature of heat treatment in a later fabricating step. Specifically,it is preferable to use silicon oxide, silicon nitride, silicon nitrideoxide, silicon oxynitride, aluminum nitride, aluminum oxide, or the likefor the insulating film 712.

A surface of the insulating film 712 may be planarized by CMP or thelike.

Next, as illustrated in FIG. 14A, a gate electrode 713 is formed overthe insulating film 712.

The gate electrode 713 can be formed to have a single-layer structure ora stacked-layer structure using one or more conductive films including ametal such as molybdenum, titanium, chromium, tantalum, tungsten,neodymium, or scandium or an alloy which contains any of these metals asa main component, or a nitride of any of these metals. Note thataluminum or copper can also be used as such metals if aluminum or coppercan withstand a temperature of heat treatment performed in a laterprocess. Aluminum or copper is preferably combined with a refractorymetal material so as to prevent a heat resistance problem and acorrosive problem. As the refractory metal material, molybdenum,titanium, chromium, tantalum, tungsten, neodymium, scandium, or the likecan be used.

For example, as a two-layer stacked structure of the gate electrode 713,the following structures are preferable: a two-layer structure in whicha molybdenum film is stacked over an aluminum film; a two-layerstructure in which a molybdenum film is stacked over a copper film; atwo-layer structure in which a titanium nitride film or a tantalumnitride film is stacked over a copper film; and a two-layer structure inwhich a titanium nitride film and a molybdenum film are stacked. As athree-layer structure of the gate electrode 713, the following structureis preferable: a stacked structure containing an aluminum film, an alloyfilm of aluminum and silicon, an alloy film of aluminum and titanium, oran alloy film of aluminum and neodymium in a middle layer and any of atungsten film, a tungsten nitride film, a titanium nitride film, and atitanium film in a top layer and a bottom layer.

Further, a light-transmitting oxide conductive film of indium oxide, amixed oxide of indium oxide and tin oxide, a mixed oxide of indium oxideand zinc oxide, zinc oxide, zinc aluminum oxide, zinc aluminumoxynitride, zinc gallium oxide, or the like can also be used as the gateelectrode 713.

The thickness of the gate electrode 713 is in the range of 10 nm to 400nm, preferably 100 nm to 200 nm. In this embodiment, after theconductive film for the gate electrode is formed to have a thickness of150 nm by a sputtering method using a tungsten target, the conductivefilm is processed (patterned) into a desired shape by etching, wherebythe gate electrode 713 is formed. Note that when end portions of theformed gate electrode are tapered, coverage with a gate insulating filmstacked thereover is improved, which is preferable. Note that a resistmask may be formed by an ink-jet method. Formation of the resist mask byan ink-jet method needs no photomask; thus, fabricating cost can bereduced.

Next, as illustrated in FIG. 14B, a gate insulating film 714 is formedover the gate electrode 713. The gate insulating film 714 can be formedto have a single-layer structure or a stacked-layer structure using oneor more selected from a silicon oxide film, a silicon nitride film, asilicon oxynitride film, a silicon nitride oxide film, an aluminum oxidefilm, an aluminum nitride film, an aluminum oxynitride film, an aluminumnitride oxide film, a hafnium oxide film, and a tantalum oxide film by aplasma CVD method, a sputtering method, or the like. It is preferablethat the gate insulating film 714 contains as little impurities such asmoisture and hydrogen as possible. In the case where a silicon oxidefilm is formed by a sputtering method, a silicon target or a quartztarget is used as a target, and oxygen or a mixed gas of oxygen andargon is used as a sputtering gas.

An oxide semiconductor that is made to be an intrinsic oxidesemiconductor or a substantially intrinsic oxide semiconductor (theoxide semiconductor that is highly purified) by removal of impurities isextremely sensitive to an interface state and an interface electriccharge; thus, an interface between the highly purified oxidesemiconductor and the gate insulating film 714 is important. Therefore,the gate insulating film (GI) that is in contact with the highlypurified oxide semiconductor needs to have higher quality.

For example, high-density plasma CVD using microwaves (e.g., a frequencyof 2.45 GHz) is preferable because a dense high-quality insulating filmhaving high withstand voltage can be formed. This is because when thehighly purified oxide semiconductor is in contact with the high-qualitygate insulating film, the interface state can be reduced and favorableinterface characteristics can be obtained.

Needless to say, a different film formation method such as a sputteringmethod or a plasma CVD method can be used as long as a high-qualityinsulating film can be formed as a gate insulating film. Moreover, it ispossible to form an insulating film whose quality and characteristics ofan interface with the oxide semiconductor are improved through heattreatment performed after the formation of the insulating film. In anycase, an insulating film that has favorable film quality as the gateinsulating film and can reduce interface state density with the oxidesemiconductor to form a favorable interface is formed.

The gate insulating film 714 may be formed to have a structure in whichan insulating film formed using a material having a high barrierproperty and an insulating film having lower proportion of nitrogen,such as a silicon oxide film or a silicon oxynitride film, are stacked.In this case, the insulating film such as a silicon oxide film or asilicon oxynitride film is formed between the insulating film having ahigh barrier property and the oxide semiconductor film. As theinsulating film having a high barrier property, a silicon nitride film,a silicon nitride oxide film, an aluminum nitride film, an aluminumnitride oxide film, or the like can be given, for example. Theinsulating film having a high barrier property is used, so thatimpurities in an atmosphere, such as moisture or hydrogen, or impuritiesin the substrate, such as an alkali metal or a heavy metal, can beprevented from entering the oxide semiconductor film, the gateinsulating film 714, or the interface between the oxide semiconductorfilm and another insulating film and the vicinity thereof. In addition,the insulating film having lower proportion of nitrogen, such as asilicon oxide film or a silicon oxynitride film, is formed so as to bein contact with the oxide semiconductor film, so that the insulatingfilm having a high barrier property can be prevented from being indirect contact with the oxide semiconductor film.

For example, a silicon nitride film (SiN_(y) (y>0)) with a thickness ofgreater than or equal to 50 nm and less than or equal to 200 nm isformed by a sputtering method as a first gate insulating film, and asilicon oxide film (SiO_(x)>0)) with a thickness of greater than orequal to 5 nm and less than or equal to 300 nm is stacked over the firstgate insulating film as a second gate insulating film; thus, these filmsmay be used as the gate insulating film 714 having a thickness of 100nm. The thickness of the gate insulating film 714 may be set asappropriate depending on characteristics needed for the transistors andmay be approximately 350 nm to 400 nm.

In this embodiment, the gate insulating film 714 having a structure inwhich a silicon oxide film having a thickness of 100 nm formed by asputtering method is stacked over a silicon nitride film having athickness of 50 nm formed by a sputtering method is formed.

Note that the gate insulating film is in contact with the oxidesemiconductor layer to be formed later. When hydrogen is contained inthe oxide semiconductor, characteristics of the transistor are adverselyaffected; therefore, it is preferable that the gate insulating film donot contain hydrogen, a hydroxyl group, and moisture. In order that thegate insulating film 714 contains as little hydrogen, a hydroxyl group,and moisture as possible, it is preferable that an impurity adsorbed onthe substrate 700, such as moisture or hydrogen, be eliminated andremoved by preheating the substrate 700, over which the gate electrode713 is formed, in a preheating chamber of a sputtering apparatus, as apretreatment for film formation. The temperature for the preheating ishigher than or equal to 100° C. and lower than or equal to 400° C.,preferably higher than or equal to 150° C. and lower than or equal to300° C. As an exhaustion unit provided in the preheating chamber, acryopump is preferable. Note that this preheating treatment can beomitted.

Next, over the gate insulating film 714, an oxide semiconductor filmhaving a thickness of greater than or equal to 2 nm and less than orequal to 200 nm, preferably greater than or equal to 3 nm and less thanor equal to 50 nm, or more preferably greater than or equal to 3 nm andless than or equal to 20 nm is formed. The oxide semiconductor film isformed by a sputtering method using an oxide semiconductor target.Moreover, the oxide semiconductor film can be formed by a sputteringmethod under a rare gas (e.g., argon) atmosphere, an oxygen atmosphere,or a mixed atmosphere of a rare gas (e.g., argon) and oxygen.

Note that before the oxide semiconductor film is formed by a sputteringmethod, dust left over a surface of the gate insulating film 714 ispreferably removed by reverse sputtering in which an argon gas isintroduced and plasma is generated. The reverse sputtering refers to amethod in which, without application of voltage to a target side, an RFpower source is used for application of voltage to a substrate sideunder an argon atmosphere to generate plasma in the vicinity of thesubstrate to modify a surface. Note that instead of an argon atmosphere,a nitrogen atmosphere, a helium atmosphere, or the like may be used.Alternatively, an argon atmosphere to which oxygen, nitrous oxide, orthe like is added may be used. Further alternatively, an argonatmosphere to which chlorine, carbon tetrafluoride, or the like is addedmay be used.

As described above, examples of the oxide semiconductor film include aquaternary metal oxide such as an In—Sn—Ga—Zn—O-based oxidesemiconductor; ternary metal oxides such as an In—Ga—Zn—O-based oxidesemiconductor, an In—Sn—Zn—O-based oxide semiconductor, anIn—Al—Zn—O-based oxide semiconductor, an Sn—Ga—Zn—O-based oxidesemiconductor, an Al—Ga—Zn—O-based oxide semiconductor, anSn—Al—Zn—O-based oxide semiconductor, an In—Hf—Zn—O-based oxidesemiconductor, an In—La—Zn—O-based oxide semiconductor, anIn—Ce—Zn—O-based oxide semiconductor, an In—Pr—Zn—O-based oxidesemiconductor, an In—Nb—Zn—O-based oxide semiconductor, anIn—Pm—Zn—O-based oxide semiconductor, an In—Sm—Zn—O-based oxidesemiconductor, an In—Eu—Zn—O-based oxide semiconductor, anIn—Gd—Zn—O-based oxide semiconductor, an In—Tb—Zn—O-based oxidesemiconductor, an In—Dy—Zn—O-based oxide semiconductor, anIn—Ho—Zn—O-based oxide semiconductor, an In—Er—Zn—O-based oxidesemiconductor, an In—Tm—Zn—O-based oxide semiconductor, anIn—Yb—Zn—O-based oxide semiconductor, an In—Lu—Zn—O-based oxidesemiconductor; binary metal oxides such as an In—Zn—O-based oxidesemiconductor, an Sn—Zn—O-based oxide semiconductor, an Al—Zn—O-basedoxide semiconductor, a Zn—Mg—O-based oxide semiconductor, anSn—Mg—O-based oxide semiconductor, an In—Mg—O-based oxide semiconductor,and an In—Ga—O-based oxide semiconductor; an In—O-based oxidesemiconductor; an Sn—O-based oxide semiconductor; and a Zn—O-based oxidesemiconductor.

In this embodiment, as the oxide semiconductor film, an In—Ga—Zn—O-basedoxide semiconductor thin film with a thickness of 30 nm, which isobtained by a sputtering method using a target including indium (In),gallium (Ga), and zinc (Zn), is used. As the above target, a targethaving a composition ratio of, for example, In₂O₃:Ga₂O₃:ZnO=1:1:1 [molarratio] is used. Alternatively, a target having a composition ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio] or a target having a compositionratio of In₂O₃:Ga₂O₃:ZnO=1:1:4 [molar ratio] can be used. The fillingrate of the target including In, Ga, and Zn is greater than or equal to90% and less than or equal to 100%, preferably greater than or equal to95% and less than 100%. With the use of the target with high fillingrate, a dense oxide semiconductor film is formed.

When an In—Zn—O based material is used as the oxide semiconductor, atarget to be used has a composition ratio of In:Zn=50:1 to 1:2 in anatomic ratio (In₂O₃:ZnO=25:1 to 1:4 in a molar ratio), preferablyIn:Zn=20:1 to 1:1 in an atomic ratio (In₂O₃:ZnO=10:1 to 1:2 in a molarratio), or more preferably In:Zn=1.5:1 to 15:1 in an atomic ratio(In₂O₃:ZnO=3:4 to 15:2 in a molar ratio). For example, when a targetused for forming the In—Zn—O-based oxide semiconductor has a compositionratio of In:Zn:O=X:Y:Z in an atomic ratio, Z>(1.5X+Y) is satisfied. Themobility can be improved by keeping the ratio of Zn within the aboverange.

In this embodiment, the oxide semiconductor film is formed over thesubstrate 700 in such a manner that the substrate is held in thetreatment chamber kept at reduced pressure, a sputtering gas from whichhydrogen and moisture have been removed is introduced into the treatmentchamber while residual moisture therein is removed, and the above targetis used. The substrate temperature in film formation may be higher thanor equal to 100° C. and lower than or equal to 600° C., preferablyhigher than or equal to 200° C. and lower than or equal to 400° C. Byforming the oxide semiconductor film in a state where the substrate isheated, the concentration of impurities included in the formed oxidesemiconductor film can be reduced. In addition, damage by sputtering canbe reduced. In order to remove residual moisture in the treatmentchamber, an entrapment vacuum pump is preferably used. For example, acryopump, an ion pump, or a titanium sublimation pump is preferablyused. The exhaustion unit may be a turbo pump provided with a cold trap.In the film formation chamber which is exhausted with the cryopump, forexample, a hydrogen atom, a compound containing a hydrogen atom, such aswater (H₂O), (more preferably, also a compound containing a carbonatom), and the like are removed, whereby the concentration of animpurity contained in the oxide semiconductor film formed in the filmformation chamber can be reduced.

As one example of the film formation condition, the distance between thesubstrate and the target is 100 mm, the pressure is 0.6 Pa, thedirect-current (DC) power source is 0.5 kW, and the atmosphere is anoxygen atmosphere (the proportion of the oxygen flow rate is 100%). Notethat a pulsed direct-current (DC) power source is preferable becausedust generated in film formation can be reduced and the film thicknesscan be made uniform.

In order that the oxide semiconductor film contains as little hydrogen,a hydroxyl group, and moisture as possible, it is preferable that animpurity adsorbed on the substrate 700, such as moisture or hydrogen, beeliminated and removed by preheating the substrate 700, over which filmsup to the gate insulating film 714 are formed, in a preheating chamberof a sputtering apparatus, as a pretreatment for film formation. Thetemperature for the preheating is higher than or equal to 100° C. andlower than or equal to 400° C., preferably higher than or equal to 150°C. and lower than or equal to 300° C. As an exhaustion unit provided inthe preheating chamber, a cryopump is preferable. Note that thispreheating treatment can also be omitted. This preheating may besimilarly performed on the substrate 700 over which layers up to andincluding an electrode 716, an electrode 717, and an electrode 718 areformed before the formation of an insulating film 723 which will beformed later.

Next, as illustrated in FIG. 14B, the oxide semiconductor film isprocessed (patterned) into a desired shape by etching or the like,whereby an island-shaped oxide semiconductor film 715 is formed over thegate insulating film 714 so that the island-shaped oxide semiconductorfilm 715 overlaps with the gate electrode 713.

A resist mask for forming the island-shaped oxide semiconductor film 715may be formed by an ink-jet method. Formation of the resist mask by anink-jet method needs no photomask; thus, fabricating cost can bereduced.

Note that etching for forming the island-shaped oxide semiconductor film715 may be wet etching, dry etching, or both dry etching and wetetching. As the etching gas for dry etching, a gas containing chlorine(chlorine-based gas such as chlorine (Cl₂), boron trichloride (BCl₃),silicon tetrachloride (SiCl₄), or carbon tetrachloride (CCl₄)) ispreferably used. Alternatively, a gas containing fluorine (afluorine-based gas such as carbon tetrafluoride (CF), sulfurhexafluoride (SF₆), nitrogen trifluoride (NF), or trifluoromethane(CHF₃)), hydrogen bromide (HBr), oxygen (O₂), any of these gases towhich a rare gas such as helium (He) or argon (Ar) is added, or the likecan be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the film into a desired shape, the etchingcondition (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on asubstrate side, the temperature of the electrode on the substrate side,or the like) is adjusted as appropriate.

As an etchant used for wet etching, ITO-07N (produced by KANTO CHEMICALCO., INC.) may be used. The etchant after the wet etching is removed bycleaning together with the etched materials. The waste liquid includingthe etchant and the material etched off may be purified and the materialmay be reused. When a material such as indium included in the oxidesemiconductor film is collected from the waste liquid after the etchingand reused, the resources can be efficiently used and the cost can bereduced.

Note that it is preferable that reverse sputtering be performed beforethe formation of a conductive film in a subsequent step so that a resistresidue or the like that is attached to surfaces of the island-shapedoxide semiconductor film 715 and the gate insulating film 714 isremoved.

Note that, in some cases, the oxide semiconductor film formed bysputtering or the like includes a large amount of moisture or hydrogenas impurities. Moisture and hydrogen easily form a donor level and thusserve as impurities in the oxide semiconductor. Thus, in an embodimentof the present invention, in order to reduce an impurity such asmoisture or hydrogen in the oxide semiconductor film, heat treatment isperformed on the oxide semiconductor film 715 under a nitrogenatmosphere, an oxygen atmosphere, an atmosphere of ultra-dry air, or arare gas (e.g., argon and helium) atmosphere. It is preferable that thecontent of water in the gas be 20 ppm or less, preferably 1 ppm or less,or more preferably 10 ppb or less.

Heat treatment performed on the oxide semiconductor film 715 caneliminate moisture or hydrogen in the oxide semiconductor film 715.Specifically, heat treatment may be performed at a temperature higherthan or equal to 300° C. and lower than or equal to 700° C., preferablyhigher than or equal to 300° C. and lower than or equal to 500° C. Forexample, heat treatment may be performed at 500° C. for longer than orequal to three minutes and shorter than or equal to six minutes. When anRTA method is used for the heat treatment, dehydration ordehydrogenation can be performed in a short time; therefore, treatmentcan be performed even at a temperature higher than the strain point of aglass substrate.

In this embodiment, an electrical furnace that is one of heat treatmentapparatuses is used.

Note that a heat treatment apparatus is not limited to an electricalfurnace, and may include a device for heating an object to be processedby heat conduction or heat radiation from a heating element such as aresistance heating element. For example, an RTA (rapid thermal anneal)apparatus such as a GRTA (gas rapid thermal anneal) apparatus or an LRTA(lamp rapid thermal anneal) apparatus can be used. An LRTA apparatus isan apparatus for heating an object to be processed by radiation of light(an electromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressuresodium lamp, or a high-pressure mercury lamp. A GRTA apparatus is anapparatus for heat treatment using a high-temperature gas. As the gas,an inert gas which does not react with an object to be processed by heattreatment, such as nitrogen or a rare gas such as argon, is used.

Note that it is preferable that in the heat treatment, moisture,hydrogen, or the like be not contained in nitrogen or a rare gas such ashelium, neon, or argon. It is preferable that the purity of nitrogen orthe rare gas such as helium, neon, or argon which is introduced into aheat treatment apparatus be set to be 6N (99.9999%) or higher,preferably 7N (99.99999%) or higher (that is, the impurity concentrationis 1 ppm or lower, preferably 0.1 ppm or lower).

Through the above process, the concentration of hydrogen in the oxidesemiconductor film 715 can be reduced and the oxide semiconductor film715 can be highly purified. Thus, the characteristics of the oxidesemiconductor film can be stabilized. In addition, heat treatment at atemperature of lower than or equal to the glass transition temperaturemakes it possible to form an oxide semiconductor film whose band gap iswide and whose carrier density is extremely low. Therefore, thetransistor can be fabricated using a large-sized substrate, so that theproductivity can be increased. In addition, by using the highly purifiedoxide semiconductor film in which the hydrogen concentration is reduced,it is possible to manufacture a transistor with high withstand voltageand a high on-off ratio.

Note that in the case where the oxide semiconductor film is heated,although depending on a material of the oxide semiconductor film orheating conditions, plate-shaped crystals are formed at the surface ofthe oxide semiconductor film in some cases. The plane-like crystal ispreferably a single crystal which is c-axis-aligned in a directionperpendicular to a surface of the oxide semiconductor film. Even if theplate-like crystals are not single crystal bodies, each crystal ispreferably a polycrystalline body which is c-axis-aligned in a directionsubstantially perpendicular to the surface of the oxide semiconductorfilm. Further, it is preferable that the polycrystalline bodies bec-axis-aligned and that the a-b planes of crystals correspond, or thea-axis or the b-axis of the crystals be aligned with each other. Notethat when a base surface of the oxide semiconductor film is uneven, aplane-like crystal is a polycrystal. Therefore, the surface of the baseis preferably as even as possible.

Next, the insulating film 708, the insulating film 712, and the gateinsulating film 714 are partly etched, whereby contact holes reachingthe island-shaped semiconductor film 702, the island-shapedsemiconductor film 703, and the wiring 711 are formed.

Then, a conductive film is formed so as to cover the oxide semiconductorfilm 715 by a sputtering method or a vacuum vapor deposition method.After that, the conductive film is patterned by etching or the like, sothat the electrodes 716 to 718 which each function as a sourceelectrode, a drain electrode, or a wiring are formed as illustrated inFIG. 14C.

Note that the electrodes 716 and 717 are in contact with theisland-shaped semiconductor film 702. The electrodes 717 and 718 are incontact with the island-shaped semiconductor film 703. An electrode 719is in contact with the wiring 711 and the oxide semiconductor film 715,and an electrode 720 is in contact with the oxide semiconductor film715.

As the material of the conductive film of the electrodes 716 to 718, anyof the following materials can be used: an element selected fromaluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten;an alloy including any of these elements; an alloy film including theabove elements in combination; or the like. Alternatively, a structuremay be employed in which a layer of a high-melting-point metal such aschromium, tantalum, titanium, molybdenum, or tungsten is stacked over orbelow a metal film of aluminum or copper. Aluminum or copper ispreferably combined with a refractory metal material so as to prevent aheat resistance problem and a corrosive problem. As the refractory metalmaterial, molybdenum, titanium, chromium, tantalum, tungsten, neodymium,scandium, yttrium, or the like can be used.

Further, the conductive film may have a single-layer structure or astacked-layer structure of two or more layers. For example, asingle-layer structure of an aluminum film including silicon, atwo-layer structure in which a titanium film is stacked over an aluminumfilm, a three-layer structure in which a titanium film, an aluminumfilm, and a titanium film are stacked in this order, and the like can begiven.

Alternatively, the conductive film for forming the electrodes 716 to 718may be formed using conductive metal oxide. As a conductive metal oxide,indium oxide, tin oxide, zinc oxide, a mixed oxide of indium oxide andtin oxide, a mixed oxide of indium oxide and zinc oxide, or the metaloxide material to which silicon or silicon oxide is added can be used.

In the case where heat treatment is performed after formation of theconductive film, the conductive film preferably has heat resistanceenough to withstand the heat treatment.

Note that each material and etching conditions are adjusted asappropriate so that the oxide semiconductor film 715 is not removed inetching of the conductive film as much as possible. Depending on etchingconditions, an exposed portion of the island-shaped oxide semiconductorfilm 715 may be partly etched, so that a groove (a recessed portion) isformed in some cases.

In this embodiment, a titanium film is used for the conductive film.Therefore, wet etching can be selectively performed on the conductivefilm using a solution (ammonia hydrogen peroxide mixture) containingammonia and hydrogen peroxide water; however, the oxide semiconductorfilm 715 is partly etched in some cases. As the ammonia hydrogenperoxide mixture, specifically, a solution in which hydrogen peroxidewater of 31 wt %, ammonia water of 28 wt %, and water are mixed at avolume ratio of 5:2:2 is used. Alternatively, dry etching may beperformed on the conductive film with the use of a gas containingchlorine (Cl₂), boron trichloride (BCl₃), or the like.

In order to reduce the number of photomasks and steps in aphotolithography step, etching may be performed with the use of a resistmask formed using a multi-tone mask which is a light-exposure maskthrough which light is transmitted so as to have a plurality ofintensities. A resist mask formed with the use of a multi-tone mask hasa plurality of thicknesses and further can be changed in shape byetching; therefore, the resist mask can be used in a plurality ofetching steps for processing into different patterns. Therefore, aresist mask corresponding to at least two kinds of different patternscan be formed by one multi-tone mask. Thus, the number of light-exposuremasks can be reduced and the number of corresponding photolithographysteps can also be reduced, whereby simplification of a process can berealized.

Next, plasma treatment is performed using a gas such as N₂O, N₂, or Ar.By the plasma treatment, water or the like which is adsorbed to anexposed surface of the oxide semiconductor film is removed. Plasmatreatment may be performed using a mixed gas of oxygen and argon aswell.

After the plasma treatment, as illustrated in FIG. 14D, the insulatingfilm 723 is formed so as to cover the electrodes 716 to 718 and theoxide semiconductor film 715. The insulating film 723 preferablycontains as little impurities such as moisture, hydrogen, and oxygen aspossible. An insulating film of a single layer or a plurality ofinsulating films stacked may be employed for the insulating film 723.When hydrogen is contained in the insulating film 723, entry of thehydrogen to the oxide semiconductor film or extraction of oxygen in theoxide semiconductor film by the hydrogen occurs, whereby a back channelportion of the oxide semiconductor film has lower resistance (n-typeconductivity); thus, a parasitic channel might be formed. Therefore, itis important that a film formation method in which hydrogen is not usedbe employed in order to form the insulating film 723 containing aslittle hydrogen as possible. A material having a high barrier propertyis preferably used for the insulating film 723. As the insulating filmhaving a high barrier property, a silicon nitride film, a siliconnitride oxide film, an aluminum nitride film, an aluminum nitride oxidefilm, or the like can be used, for example. When a plurality ofinsulating films stacked are used, an insulating film having lowerproportion of nitrogen, such as a silicon oxide film or a siliconoxynitride film, is formed on the side closer to the oxide semiconductorfilm 715 than the insulating film having a high barrier property. Then,the insulating film having a high barrier property is formed so as tooverlap with the electrodes 716 to 718 and the oxide semiconductor film715 with the insulating film having lower proportion of nitrogenprovided between the insulating film having a barrier property, and theelectrodes 716 to 718 and the oxide semiconductor film 715. By using theinsulating film having a high barrier property, the impurities such asmoisture or hydrogen can be prevented from entering the oxidesemiconductor film 715, the gate insulating film 714, or the interfacebetween the oxide semiconductor film 715 and another insulating film andthe vicinity thereof. In addition, the insulating film having lowerproportion of nitrogen, such as a silicon oxide film or a siliconoxynitride film, is formed so as to be in contact with the oxidesemiconductor film 715, so that the insulating film having a highbarrier property can be prevented from being in direct contact with theoxide semiconductor film 715.

In this embodiment, the insulating film 723 having a structure in whicha silicon nitride film having a thickness of 100 nm formed by asputtering method is stacked over a silicon oxide film having athickness of 200 nm formed by a sputtering method is formed. Thesubstrate temperature in film formation may be higher than or equal toroom temperature and lower than or equal to 300° C. and in thisembodiment, is 100° C.

After the insulating film 723 is formed, heat treatment may beperformed. The heat treatment is performed under a nitrogen atmosphere,an oxygen atmosphere, an atmosphere of ultra-dry air (air in which thewater content is less than or equal to 20 ppm, preferably less than orequal to 1 ppm, or more preferably less than or equal to 10 ppb), or arare gas (e.g., argon and helium) atmosphere at preferably a temperaturehigher than or equal to 200° C. and lower than or equal to 400° C., forexample, higher than or equal to 250° C. and lower than or equal to 350°C. In this embodiment, for example, heat treatment at 250° C. under anitrogen atmosphere for 1 hour is performed. Alternatively, RTAtreatment for a short time at a high temperature may be performed beforethe formation of the electrodes 716 to 720 in a manner similar to thatof the previous heat treatment performed on the oxide semiconductorfilm. Even when oxygen deficiency occurs in the oxide semiconductor film715 due to the previous heat treatment performed on the oxidesemiconductor film, the insulating film 723 containing oxygen isprovided and then heat treatment is performed, whereby oxygen issupplied from the insulating film 723 to the oxide semiconductor film715. Therefore, when oxygen is supplied to the region of the oxidesemiconductor film 715, oxygen deficiency serving as a donor can bereduced and the stoichiometric composition ratio can be satisfied in theoxide semiconductor film 715. As a result, the oxide semiconductor film715 can be made to be an i-type semiconductor film or a substantiallyi-type semiconductor film. Accordingly, electric characteristics of thetransistor can be improved and variation in the electric characteristicsthereof can be reduced. The timing of this heat treatment is notparticularly limited as long as it is after the formation of theinsulating film 723. When this heat treatment also serves as heattreatment in another step (e.g., heat treatment at the time of formationof a resin film or heat treatment for reducing the resistance of atransparent conductive film), the oxide semiconductor film 715 can beintrinsic or substantially intrinsic without an increase in the numberof steps.

Moreover, the oxygen deficiency that serves as a donor in the oxidesemiconductor film 715 may be reduced by subjecting the oxidesemiconductor film 715 to heat treatment under an oxygen atmosphere sothat oxygen is added to the oxide semiconductor. The heat treatment isperformed at a temperature of, for example, higher than or equal to 100°C. and lower than 350° C., preferably higher than or equal to 150° C.and lower than 250° C. It is preferable that an oxygen gas used for theheat treatment under an oxygen atmosphere do not include water,hydrogen, or the like. Alternatively, the purity of the oxygen gas whichis introduced into the heat treatment apparatus is preferably greaterthan or equal to 6N (99.9999%) or more preferably greater than or equalto 7N (99.99999%) (that is, the impurity concentration in the oxygen isless than or equal to 1 ppm, or preferably less than or equal to 0.1ppm).

Alternatively, an ion implantation method, an ion doping method, or thelike may be employed to add oxygen to the oxide semiconductor film 715so that oxygen deficiency as a donor is reduced. For example, oxygenmade to be plasma with a microwave of 2.45 GHz may be added to the oxidesemiconductor film 715.

Next, as illustrated in FIG. 14D, after a conductive film is formed overthe insulating film 723, the conductive film is patterned, so that aback gate electrode 725 is formed so that the back gate electrodeoverlaps with the oxide semiconductor film 715. Then, after the backgate electrode 725 is formed, an insulating film 726 is formed so as tocover the back gate electrode 725. The back gate electrode 725 can beformed using a material and a structure similar to those of the gateelectrode 713 or the electrodes 716 to 718.

The thickness of the back gate electrode is in the range of 10 nm to 400nm, preferably 100 nm to 200 nm. For example, the back gate electrode725 may be formed in a such a manner that a conductive film in which atitanium film, an aluminum film, and a titanium film are stacked isformed, a resist mask is formed by a photolithography method or thelike, and unnecessary portions are removed by etching so that theconductive film is processed (patterned) into a desired shape.

Through the above steps, a transistor 724 is formed.

The transistor 724 includes the gate electrode 713, the gate insulatingfilm 714 over the gate electrode 713, the oxide semiconductor film 715which is over the gate insulating film 714 and overlaps with the gateelectrode 713, a pair of the electrode 719 and the electrode 720 formedover the oxide semiconductor film 715, the insulating film 723 which isformed over the oxide semiconductor film 715, and the back gateelectrode 725 which is over the insulating film 723 and which overlapswith the oxide semiconductor film 715. In addition, the insulating film726 may be included as a component of the transistor 724. The transistor724 in FIG. 14D has a channel-etched structure in which part of theoxide semiconductor film 715 is etched between the electrode 719 and theelectrode 720.

Although description is given using a single-gate transistor as thetransistor 724, a multi-gate transistor including a plurality of channelformation regions by including the plurality of gate electrodes 713 thatare electrically connected to each other may be formed as needed.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

Embodiment 9

In this embodiment, a transistor having a structure different from thatin Embodiment 8 and including an oxide semiconductor film will bedescribed.

As in Embodiment 8, a semiconductor device illustrated in FIG. 15Aincludes an n-channel transistor 704 and a p-channel transistor 705 eachof which includes crystalline silicon. In addition, a bottom-gatetransistor 724 which has a channel-protective structure and includes anoxide semiconductor film is formed over the n-channel transistor 704 andthe p-channel transistor 705 in FIG. 15A.

The transistor 724 includes a gate electrode 730 which is formed overthe insulating film 712, a gate insulating film 731 which is over thegate electrode 730, an oxide semiconductor film 732 which overlaps withthe gate electrode 730 and which is over the gate insulating film 731, achannel protective film 733 which overlaps with the gate electrode 730and which is over the island-shaped oxide semiconductor film 732, anelectrode 734 and an electrode 735 which are formed over the oxidesemiconductor film 732, an insulating film 736 which is formed over theelectrode 734, the electrode 735, and the channel protective film 733,and a back gate electrode 737 which overlaps with the oxidesemiconductor film 732 and which is formed over the insulating film 736.Further, an insulating film 738 formed over the back gate electrode 737may be included as a component of the transistor 724.

The channel protective film 733 can prevent the portion of the oxidesemiconductor film 732 which serves as a channel formation region later,from being damaged in a later step (for example, reduction in thicknessdue to plasma or an etchant in etching). Thus, reliability of thetransistor can be improved.

An inorganic material containing oxygen (silicon oxide, silicon nitrideoxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, or thelike) can be used for the channel protective film 733. The channelprotective film 733 can be formed by a vapor deposition method such as aplasma CVD method or a thermal CVD method, or a sputtering method. Afterthe deposition of the channel protective film 733, the shape thereof isprocessed by etching.

An inorganic material containing oxygen is used for the channelprotective film 733, whereby a structure can be provided, in whichoxygen is supplied from the channel protective film 733 to the oxidesemiconductor film 732 and oxygen deficiency serving as a donor isreduced to satisfy the stoichiometric composition even when the oxygendeficiency occurs in the oxide semiconductor film 732 by heat treatmentfor reducing moisture or hydrogen. Thus, the channel formation regioncan be made to be close to i-type and a variation in electriccharacteristics of the transistor 724 due to oxygen deficiency can bereduced; accordingly, the electric characteristics can be improved.

As in Embodiment 8, a semiconductor device illustrated in FIG. 15Bincludes the n-channel transistor 704 and the p-channel transistor 705each of which includes crystalline silicon. In addition, abottom-contact transistor 724 including an oxide semiconductor film isformed over the n-channel transistor 704 and the p-channel transistor705 in FIG. 15B.

The transistor 724 includes a gate electrode 741 which is formed overthe insulating film 712, a gate insulating film 742 which is over thegate electrode 741, an electrode 743 and an electrode 744 which are overthe gate insulating film 742, an oxide semiconductor film 745 whichoverlaps with the gate electrode 741 with the gate insulating film 742therebetween, an insulating film 746 which is formed over the oxidesemiconductor film 745, and a back gate electrode 747 which overlapswith the oxide semiconductor film 745 and which is formed over theinsulating film 746. Further, an insulating film 748 formed over theback gate electrode 747 may be included as a component of the transistor724.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

Embodiment 10

In this embodiment, an example of how to calculate the off-state currentof a transistor will be described.

First, the structure of a test element group (TEG) which was used forcalculating the off-state current is described with reference to FIG.16. In this embodiment, a plurality of measurement systems 801 in whichthe circuits for evaluating characteristics are connected in parallelare provided. Specifically, FIG. 16 illustrates the test element group(TEG) in which eight measurement systems are connected in parallel (onlytwo measurement systems are illustrated in FIG. 16).

The measurement system 801 includes a transistor 811, a transistor 812,a capacitor 813, a transistor 814, and a transistor 815.

The transistor 811 is a charge injection transistor. A first terminal ofthe transistor 811 is connected to a node to which a potential V1 issupplied, and a second terminal of the transistor 811 is connected to afirst terminal of the transistor 812. A gate electrode of the transistor811 is connected a node to which a potential Vext_a is supplied.

The transistor 812 is a leakage current evaluating transistor. Note thatin this embodiment, leakage current also means the off-state current ofa transistor. The first terminal of the transistor 812 is connected tothe second terminal of the transistor 811. A second terminal of thetransistor 812 is connected to a node to which the potential V2 issupplied. A gate electrode of the transistor 812 is connected to a nodeto which a potential Vext_b is supplied.

A first electrode of the capacitor 813 is connected to the secondterminal of the transistor 811 and the first terminal of the transistor812. A second electrode of the capacitor 813 is connected to the node towhich the potential V2 is supplied.

A first terminal of the transistor 814 is connected to a node to which apotential V3 is supplied. A second terminal of the transistor 814 isconnected to a first terminal of the transistor 815. A gate electrode ofthe transistor 814 is connected to the second terminal of the transistor811, the first terminal of the transistor 812, and the first electrodeof the capacitor 813. Note that a node to which the gate electrode ofthe transistor 814 is connected is denoted by the node A.

The first terminal of the transistor 815 is connected to the secondterminal of the transistor 814. A second terminal of the transistor 815is connected to a node to which a potential V4 is supplied. A gateelectrode of the transistor 815 is connected to a node to which apotential Vext_c is supplied.

Further, the measurement system 801 outputs the potential of a node inwhich the second terminal of the transistor 814 and the first terminalof the transistor 815 are connected as a potential Vout of an outputsignal.

Furthermore, in this embodiment, a transistor in which an active layerincludes an oxide semiconductor and the channel formation regionincluded in the active layer has a channel length (L) of 10 μm and achannel width (W) of 10 μm was used as the transistor 811.

Note that a channel formation region corresponds to a region of asemiconductor film, which overlaps with a gate electrode with a gateinsulating film provided between the semiconductor film and the gateelectrode and does not overlap with a source electrode and a drainelectrode.

Furthermore, a transistor in which an active layer includes an oxidesemiconductor and the channel formation region included in the activelayer has a channel length (L) of 3 μm and a channel width (W) of 100 μmwas used as the transistor 814 and the transistor 815.

As the transistor 812, a bottom gate transistor which includes an oxidesemiconductor in the active layer was used. In the transistor 812, asource electrode and a drain electrode are in contact with an upper partof the active layer, a region where the source and drain electrodesoverlapping with a gate electrode is not provided, and an offset regionwith a width of 1 μm is provided. Providing the off set region canreduce parasitic capacitance. Further, as the transistor 812, atransistor in which the channel formation region included in the activelayer was used. The active layer varies in size in accordance withConditions 1 to 6 illustrated in Table 1 below.

TABLE 1 Channel length (L) [μm] Channel Width (W) [μm] Condition 1 1.5 1× 10⁵ Condition 2 3 1 × 10⁵ Condition 3 10 1 × 10⁵ Condition 4 1.5 1 ×10⁶ Condition 5 3 1 × 10⁶ Condition 6 10 1 × 10⁶

Note that in the case where the charge injection transistor 811 is notprovided in the measurement system 801, the leakage current evaluatingtransistor 812 needs to be turned on in charge injection to thecapacitor 813. In this case, when the leakage current evaluatingtransistor 812 is an element which is slowly turned from the on-stateinto the steady off-state, the measurement would take a long time. Whenboth a charge injection transistor 811 and the leakage currentevaluating transistor 812 are provided in the measurement system 801 asillustrated in FIG. 16, the leakage current evaluating transistor 812can be kept off in charge injection. Consequently, time required formeasurement can be reduced.

In addition, both a charge injection transistor 811 and the leakagecurrent evaluating transistor 812 are provided in the measurement system801, so that each of these transistors can be of the proper size.Further, by making the channel width W of the transistor 812 forevaluating leakage current larger than that of the transistor 811 forinjecting charge, the leakage current other than the leakage current ofthe evaluating leakage current transistor 812 can be made relativelysmall in the circuit for characteristic evaluation. As a result, theleakage current of the transistor 812 for evaluating leakage current canbe measured with high accuracy. In addition, the transistor 812 forevaluating leakage current does not need to be turned on when charge isinjected; therefore, influence of change in the potential of the node Acaused by part of the charge in the channel formation region of thetransistor 812 flowing into the node A is prevented.

On the other hand, by making the channel width W of the transistor 811for injecting charge smaller than that of the transistor 812 forevaluating leakage current, the leakage current of the transistor 811for injecting charge can be made relatively small. Further, change inthe potential of the node A, due to flow of part of the charge in thechannel formation region into the node A, has little influence at thetime of injection of charge.

In addition, by connecting the measurement systems 801 in parallel asillustrated in FIG. 16, the leakage current of the circuit forcharacteristic evaluation can be calculated with a higher accuracy.

Next, a specific method for calculating the off-state current of atransistor with the use of the test element group (TEG) illustrated inFIG. 16 will be described.

First, a method for calculating the leakage current of the TEGillustrated in FIG. 16 is described with referent to FIG. 17. FIG. 17 isa timing diagram used to describe the method for calculating the leakagecurrent of the TEG illustrated in FIG. 16.

In the method for calculating the leakage current with the use of theTEG illustrated in FIG. 16, a period is divided into a write period anda holding period. Operations performed in these periods will bedescribed below. Note that in both of the writing period and the holdingperiod, the potential V2 and the potential V4 was 0 V, the potential V3was 5 V, and the potential Vext_c was 0.5 V.

First, in a write period, the potential Vext_b is set to a potential VL(−3 V) which leads the transistor 812 to be turned off. In addition,after the potential V1 is set to a writing potential Vw, the potentialVext_a is set to a potential VH (5 V) for a predetermined time, thelevel of which leads the transistor 811 to be turned on. Consequently,with the structure, charge is stored on the node A, so that thepotential of the node A becomes equivalent to the writing potential Vw.Next, the potential Vext_a is set to the potential VL which leads thetransistor 811 to be turned off After that, the potential V1 is set to apotential VSS (0 V).

Then, in the holding period, an amount of change in the potential of thenode A, due to change in an amount of the charge held in the node A, ismeasured. From the amount of variation in the potential, the value ofthe current flowing between the first terminal and the second terminalof the transistor 812 can be calculated. In such a manner, accumulationof charge in the node A and measurement of the amount of change in thepotential of the node A can be performed.

In the measurement, charge is accumulated in the node A and the amountof variation in the potential of the node A is measured (this operationis also referred to as accumulation and measurement operation)repeatedly. Firstly, a first accumulation and measurement operation wasrepeated 15 times. In the first accumulation and measurement operation,the write potential Vw is 5 V in a write period, and held for an hour ina hold period. Secondly, a second accumulation and measurement operationwere repeated twice. In the second accumulation and measurementoperation, the write potential Vw is 3.5 V in a write period, and heldfor 50 hours in a hold period. Thirdly, a third accumulation andmeasurement operation was performed once. In the third accumulation andmeasurement operation, the write potential Vw is 4.5 V in a writeperiod, and held for 10 hours in a hold period. It is possible toconfirm if a measured current value is a value supposed to be obtainedat the steady state by repeating the storage and measurement operations.In other words, it is possible to remove a transient (a currentdecreasing with time after the start of the measurement) from I_(A)(current flowing through the node A). As a result, the leakage currentcan be measured with greater accuracy.

In general, V_(A) denoting the potential of the node A can be measuredas a function of the potential Vout of an output signal and expressed bythe following equation.

V _(A) =F(Vout)  [FORMULA 1]

Electric charge Q_(A) of the node A can be expressed by the followingequation with the use of the potential V_(A) of the node A, capacitanceC_(A) connected to the node A, and a constant (const). Here, thecapacitance C_(A) connected to the node A is the sum of the value of thecapacitance of the capacitor 813 and the value of the capacitance otherthan that of the capacitor 813.

Q _(A) =C _(A) V _(A)+const  [FORMULA 2]

I_(A) denoting current flowing through the node A is the timederivatives of charge flowing to the node A (or charge flowing from thenode A), so that the current I_(A) is expressed by the followingequation.

$\begin{matrix}{{I_{A} \equiv \frac{\Delta \; Q_{A}}{\Delta \; t}} = \frac{C_{\overset{.}{A}}\Delta \; {F({Vout})}}{\Delta \; t}} & \left\lbrack {{FORMULA}\mspace{14mu} 3} \right\rbrack\end{matrix}$

For example, Δt is approximately 54000 sec. I_(A) (current flowingthrough the node A) can be determined from C_(A) (the capacitance of thecapacitor connected to the node A) and Vout (the potential of the outputsignal) in this manner, so that the leakage current of the test elementgroup (TEG) can be determined.

Next, the results of measuring the potential Vout of the output signalby the measurement method using the above test element group (TEG) areillustrated, and the value of the leakage current of the test elementgroup (TEG), which was calculated from the measurement results, isillustrated.

FIG. 18 illustrates, as an example, a relation between elapsed time Timeand Vout (the potential of the output voltage) in the measurement (thefirst storage and measurement operation) under conditions 1 to 3. FIG.19 illustrates a relation between the elapsed time Time and the leakagecurrent calculated by the measurement in the measurement. It is foundthat the potential Vout of the output signal is fluctuated after startof the measurement and that it takes 10 hours or longer to be in asteady state.

FIG. 20 illustrates a relation between the potential of the node A andthe leakage current under conditions 1 to 6, which was estimated by themeasurement. In FIG. 20, i under condition 4 for example, the leakagecurrent is 28 yA/μm when the potential of the node A is 3.0 V. Since theoff-state current of the transistor 812 is included in the leakagecurrent, the off-state current of the transistor 812 can be alsoregarded as 28 yA/μm or lower.

As described above, the leakage current is sufficiently low in the testelement group (TEG) having a transistor including a high-purity oxidesemiconductor layer serving as a channel formation layer; therefore, itcan be understood that the off-state current of the transistor issufficiently low.

Example 1

A semiconductor device according to an embodiment of the presentinvention can realize an electronic device with low power consumption.In particular, in the case where a portable electronic device which hasdifficulty in continuously receiving power, an advantage in increasingthe continuous duty period can be obtained when a semiconductor devicewith low power consumption according to an embodiment of the presentinvention is added as a component of the device.

The semiconductor device according to an embodiment of the presentinvention can be used for display devices, laptops, or image reproducingdevices provided with recording media (typically, devices whichreproduce the content of recording media such as digital versatile discs(DVDs) and have displays for displaying the reproduced images). Otherthan the above, as an electronic device which can use the semiconductordevice according to an embodiment of the present invention, mobilephones, portable game machines, portable information terminals, e-bookreaders, video cameras, digital still cameras, goggle-type displays(head mounted displays), navigation systems, audio reproducing devices(e.g., car audio systems and digital audio players), copiers,facsimiles, printers, multifunction printers, automated teller machines(ATM), vending machines, and the like can be given. FIGS. 21A to 21Dillustrate specific examples of these electronic devices.

FIG. 21A illustrates a portable game machine including a housing 7031, ahousing 7032, a display portion 7033, a display portion 7034, amicrophone 7035, speakers 7036, an operation key 7037, a stylus 7038,and the like. The semiconductor device according to an embodiment of thepresent invention can be used for an integrated circuit for controllingdriving of the portable game machine. With the use of the semiconductordevice according to an embodiment of the present invention for theintegrated circuit for controlling driving of the portable game machine,a portable game machine with low power consumption can be provided.Although the portable game machine illustrated in FIG. 21A includes twodisplay portions 7033 and 7034, the number of display portions includedin the portable game machine is not limited to two.

FIG. 21B illustrates a mobile phone including a housing 7041, a displayportion 7042, an audio input portion 7043, an audio output portion 7044,operation keys 7045, a light-receiving portion 7046, and the like. Lightreceived in the light-receiving portion 7046 is converted intoelectrical signals, whereby external images can be loaded. Thesemiconductor device according to an embodiment of the present inventioncan be used for an integrated circuit for controlling driving of themobile phone. With the use of the semiconductor device according to anembodiment of the present invention for the integrated circuit forcontrolling driving of the mobile phone, a mobile phone with low powerconsumption can be provided.

FIG. 21C illustrates a portable information terminal including a housing7051, a display portion 7052, operation keys 7053, and the like. A modemmay be incorporated in the housing 7051 of the portable informationterminal illustrated in FIG. 21C. The semiconductor device according toan embodiment of the present invention can be used for an integratedcircuit for controlling driving of the portable information terminalWith the use of the semiconductor device according to an embodiment ofthe present invention for the integrated circuit for controlling drivingof the portable information terminal, a portable information terminalwith low power consumption can be provided.

FIG. 21D is a lighting device including a housing 7081, a light source7082, and the like. The light source 7082 includes a light-emittingelement. The semiconductor device according to an embodiment of thepresent invention can be used for an integrated circuit for controllingdriving of the light source 7082. With the use of the semiconductordevice according to an embodiment of the present invention for theintegrated circuit for controlling driving of the lighting device, alighting device with low power consumption can be provided.

This embodiment can be implemented by being combined as appropriate withany of the embodiments.

EXPLANATION OF REFERENCE

100: DC-DC converter; 101: power conversion circuit; 102: transistor;103: constant voltage generation portion; 104: output voltage controlcircuit; 105: back gate control circuit; 110: gate electrode; 111:insulating film; 112: semiconductor film; 113: source electrode; 114:drain electrode; 115: insulating film; 116: back gate electrode; 117:insulating film; 120: substrate; 130: diode; 131: coil; 132: capacitor;133: transformer; 134: diode; 135: transformer; 200: resistor; 201:resistor; 202: error amplifier; 203: phase compensation circuit; 204:comparator; 205: triangle wave generator; 206: buffer; 210: currentdetection circuit; 211: CT sensor; 212: rectifier; 213: integratingcircuit; 214: resistor; 215: capacitor; 216: power-voltage conversioncircuit; 217: comparator; 218: transistor; 219: transistor; 220:inverter; 221: power source; 301: AC power source; 302: switch; 303:rectification circuit; 304: light-emitting element; 350: photodiode;351: switch; 352: capacitor; 353: pulse width modulation circuit; 354:inverter; 355: band pass filter; 356: transistor; 357: transistor; 358:transistor; 359: transistor; 360: diode; 363: diode; 500: glasssubstrate; 501: insulating film; 502: back gate electrode; 503:insulating film; 504: semiconductor film; 505: source electrode; 506:drain electrode; 507: insulating film; 508: gate electrode; 510: region;700: substrate; 701: insulating film; 702: semiconductor film; 703:semiconductor film; 704: n-channel transistor; 705: p-channeltransistor; 706: gate electrode; 707: gate electrode; 708: insulatingfilm; 711: wiring; 712: insulating film; 713: gate electrode; 714: gateinsulating film; 715: an oxide semiconductor film; 716: electrode; 717:electrode; 718: electrode; 719: electrode; 720: electrode; 723:insulating film; 724: transistor; 725: back gate electrode; 726:insulating film; 730: gate electrode; 731: gate insulating film; 732:oxide semiconductor film; 733: channel protective film; 734: electrode;735: electrode; 736: insulating film; 737: the back gate electrode; 738:insulating film; 741: gate electrode; 742: gate insulating film; 743:electrode; 744: electrode; 745: oxide semiconductor film; 746:insulating film; 747: the back gate electrode; 748: insulating film;801: measurement system; 811: transistor; 812: transistor; 813:capacitor; 814: transistor; 815: transistor; 7031: housing; 7032:housing; 7033: display portion; 7034: display portion; 7035: microphone;7036: speaker; 7037: operation key; 7038: stylus; 7041: housing; 7042:display portion; 7043: audio input portion; 7044: audio output portion;7045: operation key; 7046: light-receiving portion; 7051: housing; 7052:display portion; 7053: operation key; 7081: housing; 7082: light source

This application is based on Japanese Patent Application serial no.2010-132529 filed with Japan Patent Office on Jun. 10, 2010, the entirecontents of which are hereby incorporated by reference.

1. (canceled)
 2. A semiconductor device comprising: a DC-DC convertercomprising: a first transistor comprising a channel formation regioncomprising an oxide semiconductor; and a constant-voltage generationcircuit electrically connected to one of a source and a drain of thefirst transistor; wherein an potential applied to a back gate of thefirst transistor is controlled according to a magnitude of a poweroutput from the constant-voltage generation circuit.
 3. Thesemiconductor device according to claim 2, wherein a threshold voltageof the first transistor is controlled by controlling the potentialapplied to the back gate of the first transistor.
 4. The semiconductordevice according to claim 3, wherein the threshold voltage is shifted ina negative direction when the power output from the constant-voltagegeneration circuit exceeds a predetermined value, and wherein thethreshold voltage is shifted in a positive direction when the poweroutput from the constant-voltage generation circuit is equal to orsmaller than the predetermined value.
 5. The semiconductor deviceaccording to claim 2, wherein the DC-DC converter further comprises asecond transistor comprising a channel formation region comprisingsilicon.
 6. The semiconductor device according to claim 5, wherein thesecond transistor is over a substrate, wherein an insulating film isover the second transistor, and wherein the first transistor is over theinsulating film.
 7. A semiconductor device comprising: a DC-DC convertercomprising: a first transistor comprising a channel formation regioncomprising an oxide semiconductor; a diode; a coil; a capacitor; and aback gate control circuit configured to control a potential applied to aback gate of the first transistor, wherein one of a source and a drainof the first transistor is electrically connected to a first terminal ofthe DC-DC converter, wherein the other of the source and the drain ofthe first transistor is electrically connected to a cathode of thediode, wherein a first terminal of the coil is electrically connected tothe cathode of the diode, wherein a second terminal of the coil iselectrically connected to a second terminal of the DC-DC converter,wherein a first electrode of the capacitor is electrically connected tothe second terminal of the DC-DC converter, wherein an anode of thediode is electrically connected to a third terminal of the DC-DCconverter, wherein a second electrode of the capacitor is electricallyconnected to a fourth terminal of the DC-DC converter, and wherein theback gate control circuit is electrically connected to the cathode ofthe diode.
 8. The semiconductor device according to claim 7, wherein theDC-DC converter is a step-down DC-DC converter.
 9. The semiconductordevice according to claim 7, wherein the DC-DC converter furthercomprises a second transistor comprising a channel formation regioncomprising silicon.
 10. The semiconductor device according to claim 9,wherein the second transistor is over a substrate, wherein an insulatingfilm is over the second transistor, and wherein the first transistor isover the insulating film.
 11. A semiconductor device comprising: a DC-DCconverter comprising: a first transistor comprising a channel formationregion comprising an oxide semiconductor; a diode; a coil; a firstcapacitor; and a back gate control circuit configured to control apotential applied to a back gate of the first transistor, wherein afirst terminal of the coil is electrically connected to a first terminalof the DC-DC converter, wherein a second terminal of the coil iselectrically connected to an anode of the diode, wherein one of a sourceand a drain of the first transistor is electrically connected to theanode of the diode, wherein a cathode of the diode is electricallyconnected to a second terminal of the DC-DC converter, wherein a firstelectrode of the first capacitor is electrically connected to the secondterminal of the DC-DC converter, wherein the other of the source and thedrain of the first transistor is electrically connected to a thirdterminal of the DC-DC converter, wherein a second electrode of the firstcapacitor is electrically connected to a fourth terminal of the DC-DCconverter, and wherein the back gate control circuit is electricallyconnected to the cathode of the diode.
 12. The semiconductor deviceaccording to claim 11, wherein the DC-DC converter is a step-up DC-DCconverter.
 13. The semiconductor device according to claim 11, furthercomprising: a photodiode; a switch; a second capacitor; and an inverter,wherein a first terminal of the photodiode and a first electrode of thesecond capacitor is electrically connected to the first terminal of theDC-DC converter, wherein a second terminal of the photodiode and asecond electrode of the second capacitor is electrically connected tothe third terminal of the DC-DC converter, wherein the inverter isconfigured to convert a voltage between the second terminal and thefourth terminal of the DC-DC converter to an AC voltage.
 14. Thesemiconductor device according to claim 11, wherein the DC-DC converterfurther comprises a second transistor comprising a channel formationregion comprising silicon.
 15. The semiconductor device according toclaim 14, wherein the second transistor is over a substrate, wherein aninsulating film is over the second transistor, and wherein the firsttransistor is over the insulating film.